SCHEMBL4579747

SCHEMBL4579747

Fc1cccc([S+](c2cccc(F)c2)c2cccc(F)c2)c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 1/20 0.46
NFE2L2 Q16236 4/20 0.44
CES2 O00748 1/20 0.41
CES1 P23141 1/20 0.41
CYP1A2 P05177 2/20 0.39
CYP3A4 P08684 1/20 0.39
CYP2D6 P10635 1/20 0.39
PKM P14618 1/20 0.39
MAPK1 P28482 1/20 0.39
THPO P40225 1/20 0.39
NPC1 O15118 1/20 0.39
CHRM5 P08912 1/20 0.39
GRM5 P41594 1/20 0.39
RAB9A P51151 1/20 0.39
BLM P54132 1/20 0.39
PMP22 Q01453 1/20 0.39
TAAR1 Q96RJ0 3/20 0.38
PARP1 P09874 1/20 0.38
ESR2 Q92731 1/20 0.38
IDO1 P14902 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL776053 0.79 ACHE (0.42) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL31408656 0.79 ACHE (0.42) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL18331412 0.75 ACHE (0.39) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL776964 0.75 ACHE (0.44) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL20048774 0.75 ACHE (0.39) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL13329 0.75
SCHEMBL31236390 0.74 CYP1A2 (0.37) NFE2L2CYP1A2IDO1CYP2A6
SCHEMBL776449 0.74 NFE2L2 (0.42) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL24335595 0.72 ACHE (0.41) ACHENFE2L2CES2CES1CYP1A2
SCHEMBL7938013 0.72 NFE2L2 (0.39) ACHENFE2L2CES2CES1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 87 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-7618683-B2 Ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate FUJIFILM CORPORATION (JP) 2009-11-17 US disclosed
US-7442485-B2 Lithographic process involving on press development FUJIFILM CORPORATION (JP) 2008-10-28 US disclosed
US-7442485-B2 Lithographic process involving on press development FUJIFILM CORPORATION (JP) 2008-10-28 US disclosed
US-20080227024-A1 PHOTOSENSITIVE COMPOSITION, AND CURED RELIEF PATTERN PRODUCTION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-20070229637-A1 Ink set for ink-jet recording and ink-jet recording method FUJIFILM CORPORATION (JP) 2007-10-04 US disclosed
EP-1484177-B1 Lithographic process involving on press development FUJIFILM CORP (JP) 2007-08-29 EP disclosed
US-20070166643-A1 Photosensitive resin composition and manufacturing method of semiconductor device using the same FUJIFILM CORPORATION (JP) 2007-07-19 US disclosed
US-20070160815-A1 Ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate FUJIFILM CORPORATION (JP) 2007-07-12 US disclosed
US-20050016402-A1 Lithographic process involving on press development FUJI PHOTO FILM CO., LTD. 2005-01-27 US disclosed
EP-1484177-A2 Lithographic process involving on press development FUJI PHOTO FILM CO., LTD. (JP) 2004-12-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 ACHE 4386/4885NFE2L2 4559/4885CES2 3033/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 ACHE 4873/4885NFE2L2 2149/4885CES2 2176/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.