SCHEMBL4613626

SCHEMBL4613626

C=CCc1cc(C=C)ccc1O

nearest known ligand 0.66

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 6/20 0.66
GABRB2 P47870 6/20 0.66
POLB P06746 2/20 0.56
MEN1 O00255 2/20 0.51
GAA P10253 2/20 0.51
MAPT P10636 2/20 0.51
CNR1 P21554 2/20 0.51
CNR2 P34972 2/20 0.51
KMT2A Q03164 2/20 0.51
ALOX5 P09917 2/20 0.51
GABRB1 P18505 1/20 0.51
RXRA P19793 1/20 0.51
GABRA5 P31644 1/20 0.51
GABRA3 P34903 1/20 0.51
GABRA2 P47869 1/20 0.51
ACE2 Q9BYF1 1/20 0.51
SIRT3 Q9NTG7 1/20 0.51
AKR1B1 P15121 3/20 0.50
TRPA1 O75762 1/20 0.47
XDH P47989 2/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8997040 0.85 GABRA1 (0.61) GABRA1GABRB2POLBMEN1GAA
SCHEMBL1002665 0.85 GABRA1 (0.61) GABRA1GABRB2POLBMEN1GAA
SCHEMBL13899836 0.83 TRPA1 (0.50) GABRA1GABRB2POLBMEN1MAPT
SCHEMBL22296492 0.82 GABRA1 (0.58) GABRA1GABRB2POLBMEN1GAA
SCHEMBL685704 0.82 TRPA1 (0.48) GABRA1GABRB2POLBTRPA1ALDH1A1
SCHEMBL30101971 0.82 TRPA1 (0.48) GABRA1GABRB2POLBTRPA1ALDH1A1
SCHEMBL15524685 0.80 TRPA1 (0.47) GABRA1GABRB2POLBMEN1GAA
SCHEMBL685611 0.80 TRPA1 (0.52) GABRA1GABRB2POLBAKR1B1TRPA1
SCHEMBL14760945 0.80 TRPA1 (0.47) GABRA1GABRB2POLBMEN1GAA
SCHEMBL71514 0.79 GABRA1 (0.70) GABRA1GABRB2POLBMEN1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023203827-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-10-26 WO disclosed
US-9335631-B2 Photosensitive resin composition, method for manufacturing organic layer using the composition, and display device comprising the organic layer SAMSUNG DISPLAY CO., LTD. (KR) 2016-05-10 US disclosed
US-20150168833-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ORGANIC LAYER USING THE COMPOSITION, AND DISPLAY DEVICE COMPRISING THE ORGANIC LAYER SAMSUNG DISPLAY CO., LTD (KR) 2015-06-18 US disclosed
EP-1913444-B1 PHOTORESIST COMPOSITION FOR IMAGING THICK FILMS AZ ELECTRONIC MATERIALS USA (US) 2013-01-16 EP disclosed
EP-1960837-A2 DEVELOPABLE UNDERCOATING COMPOSITION FOR THICK PHOTORESIST LAYERS AZ Electronic Materials USA Corp. (US) 2008-08-27 EP disclosed
EP-1913444-A2 PHOTORESIST COMPOSITION FOR IMAGING THICK FILMS AZ Electronic Materials USA Corp. (US) 2008-04-23 EP disclosed
US-7255970-B2 Photoresist composition for imaging thick films AZ ELECTRONIC MATERIALS USA CORP. (US) 2007-08-14 US disclosed
US-20070160927-A1 Radiation-sensitive resin composition, process for producing the same and process for producing semiconductor device therewith SPANSION LLC 2007-07-12 US disclosed
WO-2007054813-A2 DEVELOPABLE UNDERCOATING COMPOSITION FOR THICK PHOTORESIST LAYERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-05-18 WO disclosed
US-20070105040-A1 Developable undercoating composition for thick photoresist layers AZ ELECTRONIC MATERIALS USA CORP. 2007-05-10 US disclosed
US-5342727-A Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition HOECHST CELANESE CORP. (US) 1994-08-30 US disclosed
EP-0605856-A2 Process for the manufacture of p-hydroxystyrene polymers and use thereof BASF Aktiengesellschaft (DE) 1994-07-13 EP disclosed
US-5326826-A Binder HOECHST AKTIENGESELLSCHAFT (DE) 1994-07-05 US disclosed
US-5302488-A Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material HOECHST AKTIENGESELLSCHAFT (DE) 1994-04-12 US disclosed
EP-0501308-A1 Radiation-sensitive polymers with naphthoquinone-2-diazid-4-sulfonyl group and its use in a positive-working recording material HOECHST AKTIENGESELLSCHAFT (DE) 1992-09-02 EP disclosed
EP-0501294-A1 Radiation-sensitive polymers with 2-diazo-1,3-dicarbonyl groups, process for its production and its use in a positive-working recording material HOECHST AKTIENGESELLSCHAFT (DE) 1992-09-02 EP disclosed
EP-0365340-A2 Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene HOECHST CELANESE CORPORATION (US) 1990-04-25 EP disclosed
US-4097464-A ABS TERPOLYMERS, SELF-STABILIZING THE GOODYEAR TIRE & RUBBER COMPANY (US) 1978-06-27 US disclosed
US-4036909-A Process for the polymerization and copolymerization of vinyl and diene compounds CESKOSLOVENSKA AKADEMIE VED (CS) 1977-07-19 US disclosed
US-3998910-A PROCESS FOR THE POLYMERIZATION AND COPOLYMERIZATION OF VINYL AND DIENE COMPOUNDS CESKOSLOVENSKA AKADEMIE VED (CS) 1976-12-21 US disclosed