SCHEMBL4670261

SCHEMBL4670261

Cc1cc(C)c(S(=O)(=O)OS(c2ccccc2)(c2ccccc2)c2ccc(OC(C)(C)C)cc2)c(C)c1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAPGEF4 Q8WZA2 4/20 0.43
FFAR4 Q5NUL3 5/20 0.40
SMN1; SMN2 Q16637 3/20 0.37
LMNA P02545 2/20 0.37
MEN1 O00255 1/20 0.37
MAPT P10636 1/20 0.37
KMT2A Q03164 1/20 0.37
NR3C1 P04150 1/20 0.36
PGR P06401 1/20 0.36
NR3C2 P08235 1/20 0.36
HTT P42858 1/20 0.35
GABRG2 P18507 1/20 0.35
GABRB3 P28472 1/20 0.35
GABRA3 P34903 1/20 0.35
ALDH1A1 P00352 1/20 0.35
KEAP1 Q14145 1/20 0.34
NFE2L2 Q16236 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
METAP2 P50579 1/20 0.33
MCOLN3 Q8TDD5 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4581355 0.86 FFAR4 (0.49) RAPGEF4FFAR4SMN1; SMN2LMNAMEN1
SCHEMBL64770 0.84 HTT (0.45) SMN1; SMN2LMNAMEN1MAPTKMT2A
SCHEMBL65270 0.84 HTT (0.45) SMN1; SMN2LMNAMEN1MAPTKMT2A
SCHEMBL3197600 0.83 TDP1 (0.40) SMN1; SMN2LMNAMEN1MAPTKMT2A
SCHEMBL2903713 0.82 CA1 (0.35) SMN1; SMN2LMNAMEN1KMT2AHTT
SCHEMBL8083696 0.82 CA1 (0.35) SMN1; SMN2LMNAMEN1KMT2AHTT
SCHEMBL482368 0.80 TDP1 (0.46) SMN1; SMN2LMNAMEN1MAPTKMT2A
SCHEMBL5549720 0.78 ENPP3 (0.41) NR3C1L3MBTL1PPARA
SCHEMBL8320144 0.78 PPARA (0.39) SMN1; SMN2LMNAMEN1MAPTKMT2A
SCHEMBL8316984 0.78 PPARA (0.39) SMN1; SMN2LMNAMEN1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8343694-B2 Photomask blank, resist pattern forming process, and photomask preparation process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-01 US disclosed
US-20080305411-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-11 US disclosed
EP-2000851-A1 Photomask blank, resist pattern forming process, and photomask preparation process Shin-Etsu Chemical Co., Ltd. (JP) 2008-12-10 EP disclosed
US-7312016-B2 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-25 US disclosed
US-7288363-B2 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-30 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed
US-20050233245-A1 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-20 US disclosed