SCHEMBL472273

SCHEMBL472273

CC(=O)C(=O)Oc1ccc(N(C)C)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 6/20 0.47
ALDH1A1 P00352 5/20 0.47
KDM4E B2RXH2 3/20 0.47
MEN1 O00255 2/20 0.47
KMT2A Q03164 2/20 0.47
THRB P10828 1/20 0.47
GFER P55789 1/20 0.47
TDP1 Q9NUW8 1/20 0.47
RAB9A P51151 5/20 0.47
HPGD P15428 2/20 0.47
NPC1 O15118 3/20 0.46
TP53 P04637 2/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
ESR2 Q92731 1/20 0.46
NOX1 Q9Y5S8 1/20 0.46
TSHR P16473 2/20 0.44
HSD17B10 Q99714 2/20 0.44
ALOX15 P16050 1/20 0.44
CYP1A2 P05177 2/20 0.42
MAPK1 P28482 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1262575 0.85 ELANE (0.56) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL2170993 0.83 LMNA (0.59) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL11841636 0.79 MAPT (0.56) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL9645558 0.78 ALDH1A1 (0.49) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL27636153 0.78 HSD17B3 (0.50) MAPTALDH1A1KDM4EMEN1KMT2A
Hydrochloric Acid SCHEMBL11841634 0.78 MAPT (0.54) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL9645546 0.78 MAPT (0.53) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL4447324 0.77 LMNA (0.68) ALDH1A1KMT2ARAB9ATSHRCYP1A2
SCHEMBL24158 0.77 ELANE (0.48) MAPTALDH1A1KDM4EMEN1KMT2A
SCHEMBL6618980 0.77 CES2 (0.52) MAPTALDH1A1RAB9ANPC1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 128 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2202577-B1 Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO (JP) 2014-08-27 EP claimed
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
CN-105607426-B Polymer, chemical amplification negative resist composition and pattern forming method SHIN ETSU CHEMICAL COMPANY (JP) 2019-11-01 CN disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
CN-104330955-B For the chemical-amplification positive anti-corrosion agent composition and patterning method of EB or EUV lithographic printings 信越化学工业株式会社 2018-05-25 CN disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
CN-104199255-B Chemistry amplification negative resist composition and patterning method for EB or EUV lithographic printings 信越化学工业株式会社 2018-03-13 CN disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2253996-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-11-24 EP disclosed
CN-101893824-A Negative resist composition, patterning process, and testing process and preparation process of negative resist composition SHINETSU CHEMICAL CO 2010-11-24 CN disclosed
US-20100291484-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-18 US disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244126-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
US-20100167207-A1 Chemically amplified positive resist composition and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-01 US disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 MAPT 1287/4885ALDH1A1 2706/4885KDM4E 99/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.