SCHEMBL47320

SCHEMBL47320

C=C(C)C(=O)OC(CC)C(F)(F)C(=O)OC(C)(C)C

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.32
THRB P10828 1/20 0.30
DGAT1 O75907 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14732671 0.89 TSHR (0.33) TSHRTHRB
SCHEMBL15183396 0.88 ALDH1A1 (0.32) TSHR
SCHEMBL4568746 0.84 ALDH1A1 (0.39) TSHRTHRB
SCHEMBL47314 0.83 THRB (0.38) TSHRTHRB
SCHEMBL12439401 0.82 TSHR (0.33) TSHRTHRB
SCHEMBL14865717 0.82 TSHR (0.36) TSHRTHRB
SCHEMBL864176 0.82 TSHR (0.32) TSHRTHRB
SCHEMBL439029 0.81 TSHR (0.35) TSHRTHRB
SCHEMBL10170981 0.81 TSHR (0.34) TSHR
SCHEMBL12186473 0.81 HTT (0.36) TSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 124 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119285842-A Fluorine-containing polymer, preparation method thereof and ArF immersed photoresist prepared from fluorine-containing polymer 瑞红(苏州)电子化学品股份有限公司 2025-01-10 CN disclosed
US-20200117087-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2020-04-16 US disclosed
US-10423083-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2019-09-24 US disclosed
EP-2781959-B1 Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound JSR CORP (JP) 2019-04-24 EP disclosed
US-9996002-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-06-12 US disclosed
US-9996002-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-06-12 US disclosed
US-9951164-B2 Non-ionic aryl ketone based polymeric photo-acid generators INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-04-24 US disclosed
US-20180044459-A1 NON-IONIC ARYL KETONE BASED POLYMERIC PHOTO-ACID GENERATORS CENTRAL GLASS CO., LTD. (JP) 2018-02-15 US disclosed
US-20180044459-A1 NON-IONIC ARYL KETONE BASED POLYMERIC PHOTO-ACID GENERATORS CENTRAL GLASS CO., LTD. (JP) 2018-02-15 US disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
WO-2010029982-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR株式会社 (JP) 2010-03-18 WO disclosed
WO-2010007993-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR株式会社 (JP) 2010-01-21 WO disclosed
WO-2009142182-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND PHOTORESIST FILM JSR株式会社 (JP) 2009-11-26 WO disclosed
WO-2009142181-A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION EXPOSURE, POLYMER AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 (JP) 2009-11-26 WO disclosed
EP-2088466-A1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-08-12 EP disclosed
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-06 US disclosed
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-06 US disclosed
US-20080311507-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2008-12-18 US disclosed
US-20080311507-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2008-12-18 US disclosed
US-20080311507-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2008-12-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180044459-A1 NON-IONIC ARYL KETONE BASED POLYMERIC PHOTO-ACID GENERATORS PPARG, PPARA, PPARD TSHR 1168/4885THRB 698/4885DGAT1 502/4885
US-20080311507-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same FRG1, FBXL19, FEM1B TSHR 400/4885THRB 1932/4885DGAT1 2705/4885
US-20090197204-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND RER1, FRG1, AFF1 TSHR 2238/4885THRB 2484/4885DGAT1 662/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.