SCHEMBL47437

SCHEMBL47437

CCC(C)(C)C(=O)OCCC(=O)OC1(C)CCCC1

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 1/20 0.37
HMGCR P04035 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL47455 0.99 CYP19A1 (0.39) CYP19A1
SCHEMBL16904886 0.92 CYP19A1 (0.35) CYP19A1HMGCR
SCHEMBL12885013 0.92 CYP19A1 (0.35) CYP19A1
SCHEMBL16904893 0.90 CYP19A1 (0.37) CYP19A1HMGCR
SCHEMBL13779554 0.90 CYP19A1 (0.35) CYP19A1
SCHEMBL16904905 0.90 CYP19A1 (0.37) CYP19A1HMGCR
SCHEMBL47550 0.85 CYP19A1 (0.38) CYP19A1HMGCR
SCHEMBL14984088 0.85 CYP19A1 (0.35) CYP19A1
SCHEMBL47549 0.84 HMGCR (0.32) HMGCR
SCHEMBL47474 0.84 CYP19A1 (0.40) CYP19A1HMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 282 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11650497-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-16 US disclosed
US-20180149973-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2018-05-31 US disclosed
US-20180081269-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-22 US disclosed
US-20180067394-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-08 US disclosed
US-20170369697-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-28 US disclosed
US-7491485-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-17 US disclosed
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-7488568-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-10 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 CYP19A1 280/4885HMGCR 1978/4885
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 CYP19A1 441/4885HMGCR 3786/4885
US-20180149973-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR MCM4, RFC4, ATP1A4 CYP19A1 596/4885HMGCR 1857/4885
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group ADH1A, F12, DDAH1 CYP19A1 183/4885HMGCR 2916/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 CYP19A1 683/4885HMGCR 1468/4885
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN C1R, CYP1B1, C1S CYP19A1 26/4885HMGCR 1420/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.