Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.42 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.42 |
| ▸ | GPR84 | Q9NQS5 | 1/20 | 0.41 |
| ▸ | SCN9A | Q15858 | 1/20 | 0.32 |
| ▸ | TAS1R3 | Q7RTX0 | 2/20 | 0.32 |
| ▸ | TAS1R2 | Q8TE23 | 1/20 | 0.32 |
| ▸ | CTSV | O60911 | 1/20 | 0.31 |
| ▸ | CTSL | P07711 | 1/20 | 0.31 |
| ▸ | CTSB | P07858 | 1/20 | 0.31 |
| ▸ | CTSS | P25774 | 1/20 | 0.31 |
| ▸ | CTSK | P43235 | 1/20 | 0.31 |
| ▸ | HMGCR | P04035 | 1/20 | 0.31 |
| ▸ | TAS1R1 | Q7RTX1 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17424234 | 0.89 | CYP3A4 (0.40) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL17424499 | 0.88 | CYP3A4 (0.39) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL18898007 | 0.86 | CYP3A4 (0.41) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL14787816 | 0.84 | CYP3A4 (0.48) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL14616376 | 0.81 | CYP3A4 (0.38) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL11965874 | 0.81 | CYP3A4 (0.47) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL6368482 | 0.81 | HMGCR (0.35) | HMGCR | |
| SCHEMBL14617374 | 0.79 | CYP3A4 (0.34) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL14616375 | 0.79 | CYP3A4 (0.36) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 | |
| SCHEMBL14617370 | 0.79 | CYP3A4 (0.33) | CYP3A4CYP2D6CYP2C9CYP2C19TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 469 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-06 | — | — | US | disclosed |
| US-11650497-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-16 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080153030-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | CYP3A4 605/4885CYP2D6 950/4885CYP2C9 1735/4885 |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | MCM4, RFC4, ATP1A4 | CYP3A4 307/4885CYP2D6 2176/4885CYP2C9 1340/4885 |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | RB1, RBBP5, RRM2B | CYP3A4 3286/4885CYP2D6 1595/4885CYP2C9 3043/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | CYP3A4 1596/4885CYP2D6 1017/4885CYP2C9 351/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.