SCHEMBL4785835

SCHEMBL4785835

CCN(CC)[Si](C)(C)[Si](N(CC)CC)(N(CC)CC)N(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28242776 0.85
SCHEMBL20522948 0.71
SCHEMBL230819 0.69
SCHEMBL329203 0.69 HTT (0.32)
SCHEMBL1448901 0.69 HTT (0.32)
SCHEMBL9845415 0.69
SCHEMBL431586 0.69
SCHEMBL359593 0.68 MGLL (0.31)
SCHEMBL17553085 0.67
SCHEMBL23866514 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2006138131-A1 METHOD FOR SILICON NITRIDE CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2006-12-28 WO claimed
WO-2008077020-A2 SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS APPLIED MATERIALS, INC. (US) 2008-06-26 WO disclosed
WO-2007002040-A2 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS APPLIED MATERIALS, INC. (US) 2007-01-04 WO disclosed
WO-2006138131-A1 METHOD FOR SILICON NITRIDE CHEMICAL VAPOR DEPOSITION APPLIED MATERIALS, INC. (US) 2006-12-28 WO disclosed