SCHEMBL501860

SCHEMBL501860

COc1ccc(C(=O)OCCN(CCOC(=O)c2ccc(OC)cc2)CCOC(=O)c2ccc(OC)cc2)cc1

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ LMNA P02545 2/20 0.63
▸ SCN1A P35498 2/20 0.63
▸ SCN2A Q99250 2/20 0.63
▸ SCN3A Q9NY46 2/20 0.63
▸ SMN1; SMN2 Q16637 2/20 0.59
▸ MAPT P10636 2/20 0.59
▸ NPC1 O15118 1/20 0.59
▸ RAB9A P51151 1/20 0.59
▸ CYP2D6 P10635 2/20 0.58
▸ TSHR P16473 1/20 0.58
▸ MAOA P21397 1/20 0.58
▸ HTR3A P46098 1/20 0.58
▸ HRH3 Q9Y5N1 1/20 0.58
▸ MEN1 O00255 1/20 0.57
▸ KMT2A Q03164 1/20 0.57
▸ BLM P54132 1/20 0.56
▸ NPSR1 Q6W5P4 1/20 0.56
▸ CA1 P00915 1/20 0.56
▸ CA2 P00918 1/20 0.56
▸ ALDH1A1 P00352 2/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9480216 0.88 ALDH1A1 (0.70) LMNASCN1ASCN2ASCN3ASMN1; SMN2
SCHEMBL11985689 0.87 MAPT (0.73) LMNASMN1; SMN2MAPTNPC1RAB9A
SCHEMBL14950384 0.85 MAPT (0.55) LMNASCN1ASCN2ASCN3ASMN1; SMN2
SCHEMBL27824110 0.84 SMN1; SMN2 (0.64) LMNASMN1; SMN2MAPTNPC1RAB9A
SCHEMBL5343528 0.83 KMT2A (0.61) LMNASCN1ASCN2ASCN3ASMN1; SMN2
SCHEMBL13256587 0.82 SMN1; SMN2 (0.62) LMNASMN1; SMN2MAPTNPC1RAB9A
SCHEMBL20073067 0.82 MAPT (0.62) LMNASMN1; SMN2MAPTNPC1RAB9A
SCHEMBL1988247 0.82 TSHR (0.68) LMNASMN1; SMN2MAPTNPC1RAB9A
SCHEMBL12532605 0.82 NPC1 (0.67) LMNASMN1; SMN2MAPTNPC1RAB9A
SCHEMBL26189841 0.82 RAB9A (0.67) LMNASMN1; SMN2MAPTNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 — — EP disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 — — US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 — — US disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 — — US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 — — US disclosed
US-8431323-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-30 — — US disclosed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 — — US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 — — US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 — — US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 — — US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 — — US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 — — US disclosed
US-7670751-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 — — US disclosed
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 — — US disclosed
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 — — US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 — — US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 — — EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 — — US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 — — US disclosed
US-20050106500-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 LMNA 3801/4885SCN1A 1112/4885SCN2A 2302/4885
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L LMNA 2631/4885SCN1A 879/4885SCN2A 980/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L LMNA 2856/4885SCN1A 900/4885SCN2A 1375/4885
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, EGLN1, RER1 LMNA 621/4885SCN1A 4251/4885SCN2A 4367/4885
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS CYP21A2, C1S, C1R LMNA 4448/4885SCN1A 998/4885SCN2A 1965/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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