SCHEMBL501977

SCHEMBL501977

O=C(OCCn1ccnc1)c1cccc2ccccc12

nearest known ligand 0.63

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TBXAS1 P24557 8/20 0.58
HRH3 Q9Y5N1 2/20 0.51
KDM4E B2RXH2 2/20 0.50
L3MBTL1 Q9Y468 1/20 0.50
POLB P06746 1/20 0.49
DRD3 P35462 1/20 0.48
ALDH1A1 P00352 2/20 0.46
LMNA P02545 1/20 0.45
TDP1 Q9NUW8 1/20 0.45
FNTA P49354 1/20 0.45
FNTB P49356 1/20 0.45
QPCT Q16769 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31518372 1.00 TBXAS1 (0.58) TBXAS1HRH3KDM4EL3MBTL1POLB
SCHEMBL10655959 0.83 TBXAS1 (0.61) TBXAS1ALDH1A1LMNATDP1
SCHEMBL11249190 0.81 KDM4E (0.53) TBXAS1KDM4EL3MBTL1POLBALDH1A1
Hydrochloric Acid SCHEMBL11399269 0.80 KDM4E (0.52) TBXAS1KDM4EL3MBTL1POLBALDH1A1
Zimidoben SCHEMBL501789 0.79 TBXAS1 (0.60) TBXAS1ALDH1A1LMNATDP1
SCHEMBL786986 0.78 CDC25B (0.61) HRH3KDM4EL3MBTL1POLBDRD3
SCHEMBL11276476 0.78 POLB (0.55) TBXAS1KDM4EL3MBTL1POLBTDP1
SCHEMBL502074 0.78 HRH3 (0.56) TBXAS1HRH3KDM4EDRD3ALDH1A1
Hydrochloric Acid SCHEMBL9996122 0.76 POLB (0.54) TBXAS1KDM4EL3MBTL1POLBTDP1
Ethylene SCHEMBL11351904 0.75 POLB (0.52) TBXAS1KDM4EL3MBTL1POLBTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-8933251-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-8431323-B2 Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-30 US disclosed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-8268528-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-18 US disclosed
US-20100136482-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-20100112482-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-06 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-7670751-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-05 US disclosed
US-20090246686-A1 POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 TBXAS1 1300/4885HRH3 6/4885KDM4E 4577/4885
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L TBXAS1 3860/4885HRH3 77/4885KDM4E 3411/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L TBXAS1 3973/4885HRH3 172/4885KDM4E 3334/4885
US-20090274984-A1 CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, EGLN1, RER1 TBXAS1 2943/4885HRH3 282/4885KDM4E 115/4885
US-20090274978-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS CYP21A2, C1S, C1R TBXAS1 1734/4885HRH3 11/4885KDM4E 4313/4885
US-20100112482-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS ZYX, FOXO1, CAPZA1 TBXAS1 2660/4885HRH3 1440/4885KDM4E 1954/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.