SCHEMBL503445

SCHEMBL503445

CC(O)N(C(=O)OC(C)(C)C)C(C)O

nearest known ligand 0.35

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
HDAC6 Q9UBN7 2/20 0.35
HDAC1 Q13547 1/20 0.35
HDAC2 Q92769 1/20 0.35
DGAT1 O75907 1/20 0.33
CYP2D6 P10635 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA7 P43166 1/20 0.33
NFKB1 P19838 1/20 0.32
NFKB2 Q00653 1/20 0.32
RELA Q04206 1/20 0.32
CA14 Q9ULX7 2/20 0.32
POLB P06746 1/20 0.31
MAPK1 P28482 1/20 0.31
HRH3 Q9Y5N1 1/20 0.31
CA12 O43570 1/20 0.31
USP30 Q70CQ3 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12261426 0.83 HDAC6 (0.36) HDAC6HDAC1HDAC2DGAT1CYP2D6
SCHEMBL21594192 0.81 CA1 (0.36) HDAC6HDAC1HDAC2CYP2D6CA1
SCHEMBL643632 0.79 AAK1 (0.35) HDAC6HDAC1HDAC2DGAT1CYP2D6
SCHEMBL28732650 0.79 HDAC6 (0.34) HDAC6HDAC1HDAC2DGAT1CA1
SCHEMBL2499624 0.77 KMT2A (0.34) HDAC6HDAC1HDAC2DGAT1CA1
SCHEMBL9019269 0.77 HDAC6 (0.33) HDAC6HDAC1HDAC2DGAT1CYP2D6
SCHEMBL1028060 0.76 POLB (0.45) HDAC6HDAC1HDAC2DGAT1CYP2D6
SCHEMBL22308401 0.74 CA1 (0.36) HDAC6HDAC1HDAC2DGAT1CA1
SCHEMBL22186495 0.74 KMT2A (0.33) HDAC6HDAC1HDAC2CA1CA2
SCHEMBL9281371 0.74 HDAC6 (0.33) HDAC6HDAC1HDAC2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 233 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9475763-B2 Photoresist comprising nitrogen-containing compound ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-10-25 US claimed
WO-2026100258-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND JSR株式会社 2026-05-15 WO disclosed
WO-2026100259-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND JSR株式会社 2026-05-15 WO disclosed
WO-2026100281-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, RADIATION-SENSITIVE ACID GENERATOR, AND COMPOUND JSR株式会社 2026-05-15 WO disclosed
WO-2026100524-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, ONIUM SALT COMPOUND, AND POLYMER JSR株式会社 2026-05-15 WO disclosed
WO-2026100282-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, POLYMER, AND ONIUM SALT JSR株式会社 2026-05-15 WO disclosed
US-20260079396-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND JSR CORPORATION (JP) 2026-03-19 US disclosed
US-20260063994-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND JSR CORPORATION (JP) 2026-03-05 US disclosed
US-12517429-B2 Radiation-sensitive resin composition and method for forming pattern JSR CORPORATION (JP) 2026-01-06 US disclosed
US-20250377590-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2025-12-11 US disclosed
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-16 US disclosed
EP-1343048-A2 Anthracene derivative and radiation-sensitive resin composition JSR Corporation (JP) 2003-09-10 EP disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed
EP-1270553-A2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR Corporation (JP) 2003-01-02 EP disclosed
US-20020192593-A1 Used as chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure JSR CORPORATION (JP) 2002-12-19 US disclosed
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1253470-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-10-30 EP disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 EP disclosed
EP-0278621-B1 SUBSTITUTED AMINE DERIVATIVES, THEIR PRODUCTION AND USE Takeda Chemical Industries, Ltd. (JP) 1991-06-12 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition SRSF1, ARL1, ERCC4 HDAC6 2866/4885HDAC1 1508/4885HDAC2 2134/4885
US-20260079396-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND SRMS, RAD1, SLC11A2 HDAC6 1966/4885HDAC1 882/4885HDAC2 1742/4885
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition ARID2, RAD1, RAD51 HDAC6 1328/4885HDAC1 416/4885HDAC2 696/4885
US-20260063994-A1 RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN AND ONIUM SALT COMPOUND RAD1, RPA1, RAD51 HDAC6 1151/4885HDAC1 341/4885HDAC2 2194/4885
US-20250377590-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN RER1, RAD51, RFC2 HDAC6 1018/4885HDAC1 189/4885HDAC2 540/4885
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA HDAC6 2824/4885HDAC1 4288/4885HDAC2 4647/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.