SCHEMBL503545

SCHEMBL503545

CCCCCCCC(CCCC)CCS(=O)(=O)O

nearest known ligand 0.48

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.48
TP53 P04637 1/20 0.47
S1PR2 O95136 1/20 0.46
S1PR1 P21453 1/20 0.46
S1PR3 Q99500 1/20 0.46
CA2 P00918 1/20 0.41
FDPS P14324 4/20 0.39
GPR84 Q9NQS5 3/20 0.39
FFAR1 O14842 1/20 0.39
EPHX2 P34913 1/20 0.39
FAAH O00519 2/20 0.39
ALDH1A1 P00352 1/20 0.39
MAPT P10636 1/20 0.38
LCK P06239 1/20 0.38
PPARD Q03181 1/20 0.38
ZDHHC20 Q5W0Z9 1/20 0.38
ZDHHC2 Q9UIJ5 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27915805 0.98 LMNA (0.50) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL29002116 0.94 ALDH1A1 (0.43) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL28409630 0.90 TP53 (0.50) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL28338902 0.90 TP53 (0.50) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL21659085 0.90 LMNA (0.50) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL10784604 0.90 LMNA (0.50) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL27000192 0.90 TP53 (0.48) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL30544586 0.89 LMNA (0.42) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL8813255 0.88 TP53 (0.52) LMNATP53S1PR2S1PR1S1PR3
SCHEMBL9342210 0.86 CA2 (0.50) LMNATP53S1PR2S1PR1S1PR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9354523-B2 Composition for resist pattern-refinement, and fine pattern-forming method JSR CORPORATION (JP) 2016-05-31 US disclosed
US-20160011513-A1 COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-01-14 US disclosed
US-8809476-B2 Polymer JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20140147794-A1 METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2014-05-29 US disclosed
US-8435718-B2 Upper layer-forming composition and photoresist patterning method JSR CORPORATION (JP) 2013-05-07 US disclosed
US-8389202-B2 Polymer, radiation-sensitive composition, monomer, and method of producing compound JSR CORPORATION (JP) 2013-03-05 US disclosed
US-20130053526-A1 POLYMER JSR CORPORATION (JP) 2013-02-28 US disclosed
US-8377627-B2 Compound and radiation-sensitive composition JSR CORPORATION (JP) 2013-02-19 US disclosed
US-8334087-B2 Polymer, radiation-sensitive composition, monomer, and method of producing compound JSR CORPORATION (JP) 2012-12-18 US disclosed
US-20120178024-A1 POLYMER, RADIATION-SENSITIVE COMPOSITION, MONOMER, AND METHOD OF PRODUCING COMPOUND JSR CORPORATION (JP) 2012-07-12 US disclosed
US-20120171613-A1 UPPER LAYER FILM-FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2012-07-05 US disclosed
EP-1950610-B1 IMMERSION LITHOGRAPHIC COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR CORP (JP) 2012-05-02 EP disclosed
US-20120028198-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2012-02-02 US disclosed
US-7977442-B2 Radiation-sensitive composition, polymer and monomer JSR CORPORATION (JP) 2011-07-12 US disclosed
US-20110117489-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2011-05-19 US disclosed
US-20100331440-A1 RADIATION-SENSITIVE COMPOSITION, POLYMER AND MONOMER JSR CORPORATION (JP) 2010-12-30 US disclosed
US-20100310987-A1 POLYMER, RADIATION-SENSITIVE COMPOSITION, MONOMER, AND METHOD OF PRODUCING COMPOUND JSR CORPORATION (JP) 2010-12-09 US disclosed
US-20100003615-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2010-01-07 US disclosed
EP-2100870-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION JSR Corporation (JP) 2009-09-16 EP disclosed
EP-1950610-A1 COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR Corporation (JP) 2008-07-30 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110117489-A1 COMPOUND AND RADIATION-SENSITIVE COMPOSITION ERCC2, RAD51, ATM LMNA 634/4885TP53 92/4885S1PR2 2743/4885
US-20100331440-A1 RADIATION-SENSITIVE COMPOSITION, POLYMER AND MONOMER ALG1, MRE11, PCNA LMNA 995/4885TP53 2754/4885S1PR2 1372/4885
US-20120178024-A1 POLYMER, RADIATION-SENSITIVE COMPOSITION, MONOMER, AND METHOD OF PRODUCING COMPOUND RAD51, PYM1, MRE11 LMNA 2617/4885TP53 3000/4885S1PR2 926/4885
US-20100310987-A1 POLYMER, RADIATION-SENSITIVE COMPOSITION, MONOMER, AND METHOD OF PRODUCING COMPOUND RAD1, FRG1, RAD51 LMNA 390/4885TP53 2499/4885S1PR2 2960/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.