Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SRD5A2 | P31213 | 2/20 | 0.58 |
| ▸ | MAOA | P21397 | 1/20 | 0.57 |
| ▸ | MAOB | P27338 | 1/20 | 0.57 |
| ▸ | ALOX5 | P09917 | 1/20 | 0.50 |
| ▸ | SRD5A1 | P18405 | 1/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.46 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.46 |
| ▸ | ACSL1 | P33121 | 1/20 | 0.45 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | HPGD | P15428 | 1/20 | 0.42 |
| ▸ | CA12 | O43570 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 1/20 | 0.41 |
| ▸ | CA4 | P22748 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 1/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | TTR | P02766 | 1/20 | 0.40 |
| ▸ | TDP2 | O95551 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29824939 | 1.00 | SRD5A2 (0.58) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| SCHEMBL29429630 | 0.90 | SRD5A2 (0.58) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| SCHEMBL6621488 | 0.90 | SRD5A2 (0.58) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| SCHEMBL28014889 | 0.89 | SRD5A2 (0.57) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| SCHEMBL28779200 | 0.88 | MAOA (0.59) | SRD5A2MAOAMAOBALDH1A1ACSL1 | |
| SCHEMBL11801256 | 0.88 | SRD5A2 (0.51) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| Xanthene SCHEMBL27773733 | 0.86 | MAOA (0.65) | SRD5A2MAOAMAOBALOX5ALDH1A1 | |
| Acetic Acid Methyl Ester SCHEMBL28693641 | 0.82 | SRD5A2 (0.50) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| SCHEMBL14124825 | 0.81 | SRD5A2 (0.51) | SRD5A2MAOAMAOBALOX5SRD5A1 | |
| SCHEMBL5193695 | 0.81 | ALOX5 (0.55) | MAOAMAOBALOX5ALDH1A1MAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170075221-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| EP-3133445-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| EP-3133444-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20080306111-A1 | TRICYCLIC DELTA- OPIOID MODULATORS | CARSON JOHN R | 2008-12-11 | — | — | US | disclosed |
| EP-1833825-A1 | TRICYCLIC DELTA-OPIOID MODULATORS | JANSSEN PHARMACEUTICA N.V. (BE) | 2007-09-19 | — | — | EP | disclosed |
| WO-2006069277-A1 | TRICYCLIC δ-OPIOID MODULATORS | JANSSEN PHARMACEUTICA N.V. (BE) | 2006-06-29 | — | — | WO | disclosed |
| US-20060135522-A1 | Tricyclic delta-opioid modulators | CARSON JOHN R | 2006-06-22 | — | — | US | disclosed |
| EP-1644373-A1 | TRICYCLIC DELTA OPIOID MODULATORS | JANSSEN PHARMACEUTICA N.V. (BE) | 2006-04-12 | — | — | EP | disclosed |
| WO-2005003131-A1 | TRICYCLIC DELTA OPIOID MODULATORS | JANSSEN PHARMACEUTICA N.V. (BE) | 2005-01-13 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | SRD5A2 3101/4885MAOA 1735/4885MAOB 3685/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | SRD5A2 3632/4885MAOA 3208/4885MAOB 4309/4885 |
| US-20060135522-A1 | Tricyclic delta-opioid modulators | OPRD1, OPRK1, OPRL1 | SRD5A2 633/4885MAOA 948/4885MAOB 889/4885 |
| US-20080306111-A1 | TRICYCLIC DELTA- OPIOID MODULATORS | OPRD1, OPRK1, OPRL1 | SRD5A2 633/4885MAOA 948/4885MAOB 889/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.