Propene

Propene

SCHEMBL5145274

C=CC.CCOC(=O)C(C)O.COCCOC(C)=O.O=C(O)OCCOC(=O)O

nearest known ligand 0.38

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Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.38
TSHR P16473 1/20 0.38
LMNA P02545 1/20 0.35
HSD17B10 Q99714 1/20 0.35
ALOX15 P16050 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propene SCHEMBL4578199 0.94 ALDH1A1 (0.42) ALDH1A1TSHRLMNAHSD17B10ALOX15
Propene SCHEMBL5143760 0.89 ALDH1A1 (0.32) ALDH1A1TSHR
Propene SCHEMBL5146965 0.85 ALDH1A1 (0.41) ALDH1A1TSHRLMNAHSD17B10ALOX15
Propene SCHEMBL4579820 0.82 ALDH1A1 (0.36) ALDH1A1TSHRLMNAALOX15
Ethyl Acetate SCHEMBL5148148 0.82 ALDH1A1 (0.54) ALDH1A1TSHRLMNAHSD17B10ALOX15
Propene SCHEMBL4579715 0.81 NAAA (0.35) ALDH1A1TSHRHSD17B10ALOX15
Propene SCHEMBL6440361 0.80 TSHR (0.36) ALDH1A1TSHRHSD17B10
Acetic Acid Butyl Ester SCHEMBL7189377 0.80 ALDH1A1 (0.56) ALDH1A1TSHRLMNAHSD17B10
2-Methoxyethanol SCHEMBL3856721 0.79 TSHR (0.36) ALDH1A1TSHRHSD17B10ALOX15
Propene SCHEMBL6131238 0.78 ALDH1A1 (0.46) ALDH1A1TSHRLMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7285369-B2 photoresist composition comprising resins that increases solubility in alkali developing solution by the action of an acid and photoacid generators, which exhibits high sensitivity, high resolution and stability FUJIFILM CORPORATION (JP) 2007-10-23 US disclosed
US-7241551-B2 Positive-working resist composition FUJIFILM CORPORATION (JP) 2007-07-10 US disclosed
US-20050079441-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2005-04-14 US disclosed
US-20050064329-A1 Positive resist composition and pattern formation method using the same FUJI PHOTO FILM CO., LTD. 2005-03-24 US disclosed
US-20040248035-A1 Positive-working resist composition FUJI PHOTO FILM CO., LTD. 2004-12-09 US disclosed
US-20040009429-A1 Positive-working photosensitive composition FUJI PHOTO FILM CO., LTD. 2004-01-15 US disclosed
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed