SCHEMBL5165947

SCHEMBL5165947

CCCC(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)[O-].Cc1cc(C)c([S+](c2ccccc2)c2ccccc2)c(C)c1

nearest known ligand 0.31

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
NR3C1 P04150 3/20 0.31
PGR P06401 3/20 0.31
NR3C2 P08235 3/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL60073 0.82 CYP1A2 (0.33) NR3C1PGRNR3C2
SCHEMBL1088488 0.81 CA1 (0.32) NR3C1PGRNR3C2
SCHEMBL3132444 0.81 CA1 (0.32) NR3C1PGRNR3C2
SCHEMBL1088937 0.81 NR3C1 (0.34) NR3C1PGRNR3C2
SCHEMBL3774828 0.79
Trifluoromethanesulfonic Acid SCHEMBL546940 0.77 GPR3 (0.43) NR3C1PGRNR3C2
SCHEMBL3774822 0.75 MMP13 (0.38)
SCHEMBL18008388 0.74
Lithium Ion SCHEMBL18007875 0.74
Potassium Ion SCHEMBL18008282 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12338309-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-24 US disclosed
US-20240254268-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2024-08-01 US disclosed
US-11945894-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2024-04-02 US disclosed
EP-4176001-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM Electronic Materials U.S.A, Inc. (US) 2023-05-10 EP disclosed
EP-4118679-A1 METAL DEPOSITION PROCESSES Fujifilm Electronic Materials U.S.A., Inc. (US) 2023-01-18 EP disclosed
WO-2022005783-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2022-01-06 WO disclosed
US-20220002463-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2022-01-06 US disclosed
WO-2021183472-A1 METAL DEPOSITION PROCESSES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2021-09-16 WO disclosed
US-20210287939-A1 Metal Deposition Processes FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2021-09-16 US disclosed
EP-1257879-B1 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF FUJIFILM ELECTRONIC MATERIALS (US) 2007-04-18 EP disclosed
EP-1257879-A4 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPEC CHEM INC (US) 2004-03-17 EP disclosed
EP-1257879-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF Arch Specialty Chemicals, Inc. (US) 2002-11-20 EP disclosed
WO-2001022163-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
US-6165682-A Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2000-12-26 US disclosed