SCHEMBL60073

SCHEMBL60073

Cc1cc(C)c([S+](c2ccccc2)c2ccccc2)c(C)c1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 2/20 0.33
CYP3A4 P08684 2/20 0.33
CYP2C19 P33261 2/20 0.33
FFAR4 Q5NUL3 2/20 0.33
MEN1 O00255 1/20 0.33
CYP2D6 P10635 1/20 0.33
TSHR P16473 1/20 0.33
KMT2A Q03164 1/20 0.33
GPR3 P46089 1/20 0.33
NR3C1 P04150 3/20 0.32
PGR P06401 3/20 0.32
NR3C2 P08235 3/20 0.32
MAPT P10636 1/20 0.32
MAPK1 P28482 1/20 0.32
CA1 P00915 3/20 0.31
CA2 P00918 3/20 0.31
PTPN1 P18031 1/20 0.31
MMP1 P03956 1/20 0.30
MMP2 P08253 1/20 0.30
MMP9 P14780 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1088488 0.99 CA1 (0.32) CYP1A2CYP3A4CYP2C19FFAR4MEN1
SCHEMBL3132444 0.99 CA1 (0.32) CYP1A2CYP3A4CYP2C19FFAR4MEN1
Trifluoromethanesulfonic Acid SCHEMBL546940 0.86 GPR3 (0.43) CYP1A2CYP3A4CYP2C19FFAR4MEN1
SCHEMBL4859794 0.85 GPR3 (0.36) CYP1A2CYP3A4CYP2C19MEN1CYP2D6
SCHEMBL5692909 0.85 RAPGEF4 (0.33) CYP1A2CYP3A4CYP2C19FFAR4MEN1
SCHEMBL4853778 0.84 GPR3 (0.36) CYP1A2CYP3A4CYP2C19MEN1CYP2D6
SCHEMBL219925 0.84 GPR3 (0.35) CYP1A2CYP3A4CYP2C19FFAR4CYP2D6
SCHEMBL3129912 0.84 GPR3 (0.35) CYP1A2CYP3A4CYP2C19FFAR4CYP2D6
SCHEMBL1088937 0.84 NR3C1 (0.34) CYP1A2CYP3A4CYP2C19FFAR4MEN1
SCHEMBL51399 0.83 CA2 (0.38) GPR3CA1CA2PTPN1MMP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 228 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8759415-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-06-24 US claimed
US-20120291668-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-22 US claimed
US-8262961-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-11 US claimed
US-8128832-B2 Processes and materials for step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-06 US claimed
US-20080174051-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-24 US claimed
US-20080169268-A1 PROCESSES AND MATERIALS FOR STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-17 US claimed
EP-1938149-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS International Business Machines Corporation (US) 2008-07-02 EP claimed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US claimed
US-20070298176-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2007-12-27 US claimed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US claimed
WO-2007039346-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-04-12 WO claimed
US-20070051697-A1 Processes and materials for step and flash imprint lithography GLOBALFOUNDRIES INC. (KY) 2007-03-08 US claimed
CN-122085599-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
CN-122085598-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250218775-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC. 2025-07-03 US disclosed
WO-2002082184-A1 SILICON-CONTAINING ACETAL PROTECTED POLYMERS AND PHOTORESISTS COMPOSITIONS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2002-10-17 WO disclosed
WO-2001022163-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
WO-2001022162-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
US-6165682-A Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2000-12-26 US disclosed