SCHEMBL1088937

SCHEMBL1088937

Cc1cc(C)c([S+](c2ccccc2)c2ccccc2)c(C)c1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.34

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
NR3C1 P04150 3/20 0.34
PGR P06401 3/20 0.34
NR3C2 P08235 3/20 0.34
CYP1A2 P05177 2/20 0.32
CYP3A4 P08684 2/20 0.32
CYP2C19 P33261 2/20 0.32
MEN1 O00255 1/20 0.32
CYP2D6 P10635 1/20 0.32
TSHR P16473 1/20 0.32
KMT2A Q03164 1/20 0.32
GPR3 P46089 1/20 0.32
FFAR4 Q5NUL3 1/20 0.32
MAPT P10636 1/20 0.32
MAPK1 P28482 1/20 0.32
PTPN1 P18031 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL546940 0.85 GPR3 (0.43) NR3C1PGRNR3C2CYP1A2CYP3A4
SCHEMBL1088827 0.84 GPR3 (0.35) CYP1A2CYP3A4CYP2C19MEN1CYP2D6
SCHEMBL1088638 0.84 GPR3 (0.35) CYP1A2CYP3A4CYP2C19MEN1CYP2D6
SCHEMBL1087889 0.84 GPR3 (0.34) GPR3PTPN1
SCHEMBL60073 0.84 CYP1A2 (0.33) NR3C1PGRNR3C2CYP1A2CYP3A4
SCHEMBL1088488 0.82 CA1 (0.32) NR3C1PGRNR3C2CYP1A2CYP3A4
SCHEMBL3132444 0.82 CA1 (0.32) NR3C1PGRNR3C2CYP1A2CYP3A4
SCHEMBL5165947 0.81 NR3C1 (0.31) NR3C1PGRNR3C2
SCHEMBL5066003 0.79 FFAR4 (0.41) NR3C1FFAR4MAPT
SCHEMBL1088656 0.78 AGER (0.36) GPR3FFAR4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP claimed
US-12338309-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-24 US disclosed
US-20240254268-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2024-08-01 US disclosed
US-11945894-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2024-04-02 US disclosed
EP-4176001-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM Electronic Materials U.S.A, Inc. (US) 2023-05-10 EP disclosed
EP-4118679-A1 METAL DEPOSITION PROCESSES Fujifilm Electronic Materials U.S.A., Inc. (US) 2023-01-18 EP disclosed
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP disclosed
US-20220002463-A1 Dielectric Film-Forming Composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2022-01-06 US disclosed
WO-2022005783-A1 DIELECTRIC FILM-FORMING COMPOSITION FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2022-01-06 WO disclosed
WO-2021183472-A1 METAL DEPOSITION PROCESSES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2021-09-16 WO disclosed
US-20010036589-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2001-11-01 US disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP disclosed
WO-2001022163-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
WO-2001022162-A2 RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2001-03-29 WO disclosed
US-6165682-A Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof ARCH SPECIALTY CHEMICALS, INC. (US) 2000-12-26 US disclosed
US-6146793-A TERPOLYMER WITH CHEMICALLY AMPLIFIED (ACID LABILE) MOIETIES AND ORGANOSILICON MOIETIES SUITABLE FOR USE AS THE BINDER RESIN FOR A PHOTOIMAGEABLE RESIST PHOTORESIST COMPOSITION SUITABLE FOR USE IN 193 NM PHOTOLITHOGRAPHIC PROCESSES. ARCH SPECIALTY CHEMICALS, INC. (US) 2000-11-14 US disclosed
EP-0989459-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
WO-1999042903-A1 RADIATION SENSITIVE TERPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND 193 nm BILAYER SYSTEMS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-08-26 WO disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed