SCHEMBL518175

SCHEMBL518175

c1cc(C2=NCCS2)cs1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
CYP2A6 P11509 6/20 0.39
CYP2B6 P20813 3/20 0.39
CYP2E1 P05181 2/20 0.39
ALDH1A1 P00352 1/20 0.36
MAPT P10636 1/20 0.36
ATM Q13315 1/20 0.36
CYP3A4 P08684 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
HTR1D P28221 1/20 0.36
HTR2B P41595 1/20 0.36
HTR3A P46098 1/20 0.36
HTR5A P47898 1/20 0.36
NPC1 O15118 1/20 0.35
CASP3 P42574 1/20 0.35
RAB9A P51151 1/20 0.35
SENP8 Q96LD8 1/20 0.35
SENP7 Q9BQF6 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15843096 0.71 LMNA (0.41) LMNASMN1; SMN2ALDH1A1MAPTATM
SCHEMBL8378973 0.69 MGLL (0.43) LMNASMN1; SMN2ALDH1A1MAPTATM
SCHEMBL9329758 0.69 MAPT (0.45) LMNASMN1; SMN2ALDH1A1MAPTATM
SCHEMBL6170485 0.65 CYP2A6 (0.50) LMNASMN1; SMN2CYP2A6CYP2B6CYP2E1
SCHEMBL14875080 0.65 NPC1 (0.48) LMNASMN1; SMN2ALDH1A1MAPTATM
SCHEMBL2785438 0.64 NISCH (0.46) LMNASMN1; SMN2CYP2A6CYP2B6CYP2E1
SCHEMBL15842578 0.64 NOS3 (0.37) LMNASMN1; SMN2ALDH1A1MAPTATM
SCHEMBL31429656 0.63 CYP2A6 (0.38) CYP2A6CYP2B6CYP2E1CYP3A4CYP2C9
SCHEMBL16492223 0.62 LMNA (0.43) LMNASMN1; SMN2ALDH1A1MAPTATM
SCHEMBL3822969 0.62 ALDH1A1 (0.47) LMNASMN1; SMN2ALDH1A1MAPTATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12439528-B2 Method of preparing a high density interconnect printed circuit board including microvias filled with copper Atotech Deutschland GmbH & Co. KG (DE) 2025-10-07 US disclosed
CN-113924669-B Copper foil capable of preventing occurrence of wrinkles, electrode comprising the same, secondary battery comprising the same, and method for manufacturing the same SK纳力世有限公司 2025-04-29 CN disclosed
US-12245383-B2 Method of preparing a high density interconnect printed circuit board including microvias filled with copper Atotech Deutschland GmbH & Co. KG (DE) 2025-03-04 US disclosed
US-20240341042-A1 METHOD OF PREPARING A HIGH DENSITY INTERCONNECT PRINTED CIRCUIT BOARD INCLUDING MICROVIAS FILLED WITH COPPER Atotech Deutschland GmbH & Co. KG (DE) 2024-10-10 US disclosed
US-12063751-B2 Manufacturing sequences for high density interconnect printed circuit boards and a high density interconnect printed circuit board Atotech Deutschland GmbH & Co. KG (DE) 2024-08-13 US disclosed
CN-118215756-A Electrolytic copper foil with high elongation and high strength characteristics 乐天能源材料公司 2024-06-18 CN disclosed
CN-118140015-A Electrolytic copper foil for current collector of secondary battery 乐天能源材料公司 2024-06-04 CN disclosed
CN-118140014-A Electrolytic copper foil for current collector of secondary battery 乐天能源材料公司 2024-06-04 CN disclosed
CN-110997983-B Crease-resistant copper foil, electrode comprising same, secondary battery comprising same, and method for manufacturing same SK纳力世有限公司 2022-10-21 CN disclosed
US-20220304164-A1 MANUFACTURING SEQUENCES FOR HIGH DENSITY INTERCONNECT PRINTED CIRCUIT BOARDS AND A HIGH DENSITY INTERCONNECT PRINTED CIRCUIT BOARD Atotech Deutschland GmbH & Co. KG (DE) 2022-09-22 US disclosed
US-20200040039-A1 PEPTIDE COMPOUND AND METHOD FOR PRODUCING SAME, COMPOSITION FOR SCREENING USE, AND METHOD FOR SELECTING PEPTIDE COMPOUND FUJIFILM CORPORATION (JP) 2020-02-06 US disclosed
EP-2399281-B1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) ATOTECH DEUTSCHLAND GMBH (DE) 2016-04-20 EP disclosed
CN-102318041-B PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) ATOTECH DEUTSCHLAND GMBH 2014-05-07 CN disclosed
EP-2611950-B1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV), WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE ATOTECH DEUTSCHLAND GMBH (DE) 2013-11-13 EP disclosed
EP-2611950-A1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE Atotech Deutschland GmbH (DE) 2013-07-10 EP disclosed
CN-103038397-A Method for electrodepositing chip-to-chip, chip-to-wafer, and wafer-to-wafer copper interconnects in Through Silicon Vias (TSVs) by heating the substrate and cooling the electrolyte ATOTECH DEUTSCHLAND GMBH 2013-04-10 CN disclosed
US-20120024713-A1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE ATOTECH DEUTSCHLAND GMBH (DE) 2012-02-02 US disclosed
WO-2012014029-A1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE ATOTECH DEUTSCHLAND GMBH (DE) 2012-02-02 WO disclosed
CN-102318041-A PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) ATOTECH DEUTSCHLAND GMBH 2012-01-11 CN disclosed
US-20100206737-A1 PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) ATOTECH DEUTSCHLAND GMBH (DE) 2010-08-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200040039-A1 PEPTIDE COMPOUND AND METHOD FOR PRODUCING SAME, COMPOSITION FOR SCREENING USE, AND METHOD FOR SELECTING PEPTIDE COMPOUND VIP, NPPA, NGLY1 LMNA 3026/4885SMN1; SMN2 3728/4885CYP2A6 4664/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.