SCHEMBL5400611

SCHEMBL5400611

O=S(=O)(O[I+](c1ccccc1)c1ccccc1)c1cc(Cl)ccc1Cl

nearest known ligand 0.47

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.47
POLB P06746 2/20 0.41
MCL1 Q07820 3/20 0.41
ALDH1A1 P00352 2/20 0.41
AR P10275 1/20 0.40
GAA P10253 1/20 0.40
L3MBTL1 Q9Y468 3/20 0.40
TSHR P16473 2/20 0.40
HPGD P15428 1/20 0.40
ALOX15 P16050 1/20 0.40
USP2 O75604 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
ACLY P53396 1/20 0.38
MAPK1 P28482 1/20 0.38
PKM P14618 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412177 0.85 TP53 (0.40) KDM4EMCL1ALDH1A1L3MBTL1TSHR
SCHEMBL5400412 0.84 PGR (0.42) ALDH1A1L3MBTL1
SCHEMBL5401430 0.82 RAB9A (0.38) KDM4EMCL1ALDH1A1L3MBTL1TSHR
SCHEMBL5408741 0.82 HSD17B2 (0.41) KDM4EMCL1ALDH1A1L3MBTL1TSHR
SCHEMBL5403649 0.81 TP53 (0.41) KDM4EPOLBMCL1ALDH1A1GAA
SCHEMBL5408470 0.79 GAA (0.40) KDM4EPOLBMCL1ALDH1A1GAA
SCHEMBL5406935 0.78 MCL1 (0.36) KDM4EMCL1ALDH1A1GAAL3MBTL1
SCHEMBL5407041 0.73 KMT2A (0.43) POLBALDH1A1L3MBTL1MEN1KMT2A
SCHEMBL2898544 0.73 TDP1 (0.56) ALDH1A1GAAL3MBTL1MEN1KMT2A
SCHEMBL561670 0.73 KDM4E (0.48) KDM4EPOLBMCL1ALDH1A1AR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed