SCHEMBL5408516

SCHEMBL5408516

CCc1ccc([S+](c2ccc(CC)cc2)c2ccc(CC)cc2)cc1.O=S(=O)([O-])c1c(F)c(F)c(F)c(F)c1F

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA2 P00918 7/20 0.41
CA1 P00915 6/20 0.35
ALDH1A1 P00352 3/20 0.34
UCHL1 P09936 1/20 0.34
HDAC6 Q9UBN7 3/20 0.33
HDAC3 O15379 2/20 0.33
HDAC11 Q96DB2 2/20 0.33
HDAC8 Q9BY41 2/20 0.33
HPGD P15428 2/20 0.33
KMT2A Q03164 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
LMNA P02545 1/20 0.33
METAP2 P50579 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5408941 0.94 CA2 (0.37) CA2CA1ALDH1A1HDAC6HDAC11
SCHEMBL5403705 0.88 CA2 (0.44) CA2CA1ALDH1A1KMT2AL3MBTL1
SCHEMBL5403721 0.83 CA2 (0.40) CA2CA1ALDH1A1HDAC6HDAC11
SCHEMBL5408495 0.81 GAA (0.38) CA2CA1ALDH1A1HDAC6HDAC11
SCHEMBL5409949 0.81 CA2 (0.41) CA2CA1ALDH1A1UCHL1HDAC6
SCHEMBL5419102 0.81 CA2 (0.42) CA2CA1ALDH1A1HPGDMETAP2
SCHEMBL5421312 0.79 ALDH1A1 (0.38) ALDH1A1HPGDKMT2ALMNA
SCHEMBL3188835 0.78 PTGS2 (0.33) CA2CA1HDAC6HDAC11HDAC8
SCHEMBL384538 0.78 CA1 (0.38) CA2CA1HDAC6HDAC11HDAC8
SCHEMBL5408503 0.77 KAT6A (0.35) CA2CA1ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed