SCHEMBL5408941

SCHEMBL5408941

CCc1ccc([S+](c2ccccc2)c2ccccc2)cc1.O=S(=O)([O-])c1c(F)c(F)c(F)c(F)c1F

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 3/20 0.37
TAS2R14 Q9NYV8 1/20 0.36
TP53 P04637 3/20 0.36
ALDH1A1 P00352 7/20 0.36
ATM Q13315 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CA12 O43570 2/20 0.35
CA1 P00915 2/20 0.35
CA7 P43166 2/20 0.35
CA13 Q8N1Q1 2/20 0.35
MAPT P10636 2/20 0.35
HDAC11 Q96DB2 1/20 0.34
HDAC8 Q9BY41 1/20 0.34
HDAC6 Q9UBN7 1/20 0.34
KDM4E B2RXH2 2/20 0.33
LMNA P02545 1/20 0.33
F2 P00734 1/20 0.33
VDR P11473 1/20 0.33
THRB P10828 1/20 0.33
LIMK2 P53671 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5408516 0.94 CA2 (0.41) CA2TP53ALDH1A1L3MBTL1CA1
SCHEMBL5403721 0.89 CA2 (0.40) CA2ALDH1A1L3MBTL1CA12CA1
SCHEMBL5419102 0.87 CA2 (0.42) CA2ALDH1A1CA12CA1CA7
SCHEMBL384538 0.86 CA1 (0.38) CA2CA12CA1CA7CA13
SCHEMBL5421312 0.85 ALDH1A1 (0.38) ALDH1A1KDM4ELMNA
SCHEMBL3188835 0.84 PTGS2 (0.33) CA2CA12CA1CA7CA13
SCHEMBL3135484 0.84 CA12 (0.36) CA2TP53ALDH1A1ATML3MBTL1
SCHEMBL3132773 0.84 CA12 (0.36) CA2TP53ALDH1A1ATML3MBTL1
SCHEMBL3136606 0.83 PKM (0.37) CA2ALDH1A1CA12CA1CA7
SCHEMBL3182561 0.83 CA2 (0.46) CA2TAS2R14TP53ALDH1A1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed