SCHEMBL5454290

SCHEMBL5454290

C=CCc1[c]cccc1C

nearest known ligand 0.31

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
TP53 P04637 1/20 0.31
CYP3A4 P08684 1/20 0.31
ALOX15 P16050 1/20 0.31
TSHR P16473 1/20 0.31
ALOX12 P18054 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL176260 0.78 GABRA1 (0.42) ALDH1A1
SCHEMBL10626556 0.76 TSHR (0.36) ALDH1A1TSHR
SCHEMBL7190874 0.76 ALDH1A1 (0.31) ALDH1A1TP53CYP3A4ALOX15TSHR
SCHEMBL1515066 0.76
SCHEMBL5604556 0.76 CYP3A4 (0.35) ALDH1A1CYP3A4ALOX15TSHRSMN1; SMN2
SCHEMBL366548 0.76 XDH (0.38) ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL10457106 0.76 ALDH1A1 (0.31) ALDH1A1TP53CYP3A4ALOX15TSHR
SCHEMBL2362110 0.76 ALDH1A1 (0.34) ALDH1A1
SCHEMBL4025062 0.76 ALDH1A1 (0.43) ALDH1A1TP53CYP3A4ALOX15TSHR
SCHEMBL15936494 0.74 ALOX5 (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7189663-B2 Organic semiconductor device having an active dielectric layer comprising silsesquioxanes LUCENT TECHNOLOGIES INC. (US) 2007-03-13 US disclosed
US-20050148129-A1 Organic semiconductor device having an active dielectric layer comprising silsesquioxanes LUCENT TECHNOLOGIES INC. 2005-07-07 US disclosed
US-5962113-A POLYSILOXANE-AMIDE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1999-10-05 US disclosed
US-5883219-A COMPRISING SUBSTRATE, METALLIC CIRCUIT LINES POSITIONED ON SUBSTRATE, AND POROUS DIELECTRIC MATERIAL POSITIONED ON THE CIRCUIT LINES; THE DIELECTRIC MATERIAL COMPRISES THE REACTION PRODUCT OF AN ORGANIC POLYSILICA AND POLYAMIC ESTER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1999-03-16 US disclosed