Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 3/20 | 0.65 |
| ▸ | CA2 | P00918 | 7/20 | 0.62 |
| ▸ | CA1 | P00915 | 5/20 | 0.62 |
| ▸ | CA12 | O43570 | 3/20 | 0.62 |
| ▸ | CA9 | Q16790 | 3/20 | 0.62 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.62 |
| ▸ | HPGD | P15428 | 3/20 | 0.50 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.50 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.50 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.50 |
| ▸ | RECQL | P46063 | 2/20 | 0.50 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.50 |
| ▸ | MAPT | P10636 | 2/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.50 |
| ▸ | MEN1 | O00255 | 1/20 | 0.50 |
| ▸ | NPC1 | O15118 | 1/20 | 0.50 |
| ▸ | GMNN | O75496 | 1/20 | 0.50 |
| ▸ | CA3 | P07451 | 1/20 | 0.50 |
| ▸ | TYR | P14679 | 1/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8028971 | 1.00 | LMNA (0.65) | LMNACA2CA1CA12CA9 | |
| SCHEMBL18838 | 0.81 | GAA (0.67) | LMNACA2CA1CA12CA9 | |
| SCHEMBL3792342 | 0.81 | GAA (0.67) | LMNACA2CA1CA12CA9 | |
| SCHEMBL124022 | 0.81 | GAA (0.67) | LMNACA2CA1CA12CA9 | |
| SCHEMBL29724901 | 0.81 | GAA (0.67) | LMNACA2CA1CA12CA9 | |
| Water SCHEMBL6425932 | 0.79 | GAA (0.64) | LMNACA2CA1CA12CA9 | |
| Hydrochloric Acid SCHEMBL10624747 | 0.79 | GAA (0.64) | LMNACA2CA1CA12CA9 | |
| SCHEMBL4737577 | 0.79 | LMNA (0.62) | LMNACA2CA1CA12CA9 | |
| SCHEMBL21095944 | 0.79 | LMNA (0.62) | LMNACA2CA1CA12CA9 | |
| Potassium SCHEMBL11745543 | 0.79 | GAA (0.64) | LMNACA2CA1CA12CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-119452307-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| CN-117769684-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2024-03-26 | — | — | CN | disclosed |
| CN-117716290-A | Resist composition and method for forming resist film using the same | 三菱瓦斯化学株式会社 | 2024-03-15 | — | — | CN | disclosed |
| US-11866564-B2 | Polymer substrate with hard coat layer | TEIJIN LIMITED (JP) | 2024-01-09 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-8198007-B2 | Negative-working resist composition and pattern forming method using the same | DAI NIPPON PRINTING CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20100266952-A1 | CYCLIC COMPOUND, PHOTORESIST BASE, PHOTORESIST COMPOSITION, MICROFABRICATION PROCESS, AND SEMICONDUCTOR DEVICE | IDEMITSU KOSAN CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20100239980-A1 | NEGATIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | DAI NIPPON PRINTING CO., LTD. (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | LMNA 772/4885CA2 3332/4885CA1 1120/4885 |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | PARG, RAD51, SRMS | LMNA 469/4885CA2 3153/4885CA1 1834/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | LMNA 559/4885CA2 4687/4885CA1 1531/4885 |
| US-20100266952-A1 | CYCLIC COMPOUND, PHOTORESIST BASE, PHOTORESIST COMPOSITION, MICROFABRICATION PROCESS, AND SEMICONDUCTOR DEVICE | C1S, CCNL2, CCNT1 | LMNA 977/4885CA2 2323/4885CA1 2257/4885 |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, RER1, REV1 | LMNA 298/4885CA2 4834/4885CA1 1807/4885 |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | WEE1, SLC11A2, RAD1 | LMNA 761/4885CA2 4845/4885CA1 2746/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.