Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 1/20 | 0.65 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.65 |
| ▸ | ESR1 | P03372 | 5/20 | 0.39 |
| ▸ | ESR2 | Q92731 | 4/20 | 0.39 |
| ▸ | BACE1 | P56817 | 1/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 4/20 | 0.38 |
| ▸ | HPGD | P15428 | 3/20 | 0.38 |
| ▸ | TSHR | P16473 | 2/20 | 0.38 |
| ▸ | LMNA | P02545 | 2/20 | 0.38 |
| ▸ | TYR | P14679 | 2/20 | 0.38 |
| ▸ | AR | P10275 | 1/20 | 0.38 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.38 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.38 |
| ▸ | HTR6 | P50406 | 1/20 | 0.38 |
| ▸ | ESRRG | P62508 | 1/20 | 0.38 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.36 |
| ▸ | ALOX15 | P16050 | 5/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL548187 | 0.87 | GABRA1 (0.45) | GABRA1GABRB2ESR1ESR2HSD17B10 | |
| SCHEMBL12357876 | 0.84 | GABRA1 (0.48) | GABRA1GABRB2ESR1ESR2CYP2C9 | |
| SCHEMBL12357795 | 0.84 | GABRA1 (0.48) | GABRA1GABRB2HSD17B10TSHRAR | |
| SCHEMBL7764602 | 0.79 | GABRA1 (0.60) | GABRA1GABRB2HSD17B10HPGDTSHR | |
| SCHEMBL18268 | 0.79 | GABRA1 (1.00) | GABRA1GABRB2ESR1ESR2BACE1 | |
| SCHEMBL8985984 | 0.79 | MEN1 (0.42) | GABRA1GABRB2ESR1ESR2HSD17B10 | |
| SCHEMBL3969052 | 0.79 | GABRA1 (0.60) | GABRA1GABRB2HSD17B10HPGDTSHR | |
| SCHEMBL18802839 | 0.79 | ALOX15 (0.46) | GABRA1GABRB2ESR1ESR2HSD17B10 | |
| SCHEMBL547694 | 0.79 | RXRB (0.40) | GABRA1GABRB2ESR1ESR2KDM4E | |
| SCHEMBL13694338 | 0.78 | GABRA1 (0.47) | GABRA1GABRB2ESR1ESR2HSD17B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| EP-4270108-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-11-01 | — | — | EP | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| CN-110531580-B | Chemically amplified negative resist composition and resist pattern forming method | 信越化学工业株式会社 | 2023-08-29 | — | — | CN | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-7323284-B2 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| EP-1319646-B1 | PROCESS FOR PREPARATION OF 3,5-BISALKYLPHENOLS | KOWA CO (JP) | 2007-04-18 | — | — | EP | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-6806395-B2 | FOR PRODUCING 3,5- DIISOPROPYLPHENOL OR A SIMILAR COMPOUND, WHICH SERVES AS AN INTERMEDIATE FOR PRODUCING ANTI-INFLAMMATORY AGENTS, PESTICIDES, ETC. | KOWA CO., LTD. (JP) | 2004-10-19 | — | — | US | disclosed |
| US-20040044255-A1 | Process for preparation of 3,5-bisalkylphenols | KOWA CO., LTD. (JP) | 2004-03-04 | — | — | US | disclosed |
| EP-1319646-A1 | PROCESS FOR PREPARATION OF 3,5-BISALKYLPHENOLS | Kowa Co., Ltd. (JP) | 2003-06-18 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | GABRA1 3202/4885GABRB2 4213/4885ESR1 3319/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | GABRA1 3110/4885GABRB2 3518/4885ESR1 446/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | GABRA1 2429/4885GABRB2 3018/4885ESR1 194/4885 |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | PARG, PCNA, PLK2 | GABRA1 1265/4885GABRB2 599/4885ESR1 216/4885 |
| US-20040044255-A1 | Process for preparation of 3,5-bisalkylphenols | ACSL3, HACL2, ARL1 | GABRA1 3761/4885GABRB2 4267/4885ESR1 655/4885 |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | LBR, IDUA, ADORA1 | GABRA1 955/4885GABRB2 1852/4885ESR1 1589/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.