Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TYK2 | P29597 | 1/20 | 0.33 |
| ▸ | GLRA3 | O75311 | 1/20 | 0.33 |
| ▸ | GLRB | P48167 | 1/20 | 0.33 |
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL547680 | 0.90 | CES2 (0.33) | TYK2GLRA3GLRBACE2 | |
| SCHEMBL548036 | 0.86 | SRD5A2 (0.43) | ACE2 | |
| SCHEMBL547814 | 0.85 | ALDH1A1 (0.45) | — | |
| SCHEMBL548944 | 0.84 | CYP3A4 (0.37) | TYK2GLRA3GLRB | |
| SCHEMBL9934240 | 0.84 | GLRA3 (0.45) | TYK2GLRA3GLRBACE2 | |
| SCHEMBL978333 | 0.82 | CES2 (0.35) | TYK2ACE2 | |
| SCHEMBL548146 | 0.82 | ACHE (0.46) | — | |
| SCHEMBL548258 | 0.79 | CYP3A4 (0.40) | TYK2 | |
| SCHEMBL548589 | 0.77 | — | — | |
| SCHEMBL547563 | 0.75 | KDM4E (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-20 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-7871751-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-7323284-B2 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | TYK2 252/4885GLRA3 1962/4885GLRB 2452/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | TYK2 509/4885GLRA3 61/4885GLRB 313/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | TYK2 586/4885GLRA3 77/4885GLRB 339/4885 |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | TERB1, C5, TERT | TYK2 1158/4885GLRA3 1555/4885GLRB 3633/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | TYK2 512/4885GLRA3 2139/4885GLRB 1942/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | TYK2 2955/4885GLRA3 575/4885GLRB 935/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | TYK2 586/4885GLRA3 77/4885GLRB 339/4885 |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, RER1, REV1 | TYK2 2576/4885GLRA3 979/4885GLRB 1460/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | TYK2 2147/4885GLRA3 439/4885GLRB 1296/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.