Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 2/20 | 0.50 |
| ▸ | CA1 | P00915 | 2/20 | 0.50 |
| ▸ | CA2 | P00918 | 2/20 | 0.50 |
| ▸ | CA3 | P07451 | 2/20 | 0.50 |
| ▸ | CA4 | P22748 | 2/20 | 0.50 |
| ▸ | CA9 | Q16790 | 2/20 | 0.50 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.50 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.50 |
| ▸ | GLA | P06280 | 1/20 | 0.50 |
| ▸ | MMP3 | P08254 | 1/20 | 0.48 |
| ▸ | BCL2L1 | Q07817 | 1/20 | 0.48 |
| ▸ | ESR1 | P03372 | 11/20 | 0.44 |
| ▸ | ESR2 | Q92731 | 9/20 | 0.44 |
| ▸ | MEN1 | O00255 | 2/20 | 0.42 |
| ▸ | NPC1 | O15118 | 2/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.42 |
| ▸ | LTA4H | P09960 | 1/20 | 0.42 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.42 |
| ▸ | BAX | Q07812 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL502108 | 0.97 | CA12 (0.53) | CA12CA1CA2CA3CA4 | |
| SCHEMBL158163 | 0.97 | CA12 (0.53) | CA12CA1CA2CA3CA4 | |
| Iodide SCHEMBL1049929 | 0.95 | CA12 (0.50) | CA12CA1CA2CA3CA4 | |
| Bromide SCHEMBL3136370 | 0.95 | CA12 (0.50) | CA12CA1CA2CA3CA4 | |
| Hydrochloric Acid SCHEMBL3142697 | 0.95 | CA12 (0.50) | CA12CA1CA2CA3CA4 | |
| Phenol SCHEMBL8331182 | 0.89 | CA12 (0.65) | CA12CA1CA2CA3CA4 | |
| Perchlorate SCHEMBL3126944 | 0.88 | CA12 (0.43) | CA12CA1CA2CA3CA4 | |
| SCHEMBL3139535 | 0.88 | MMP3 (0.48) | CA12CA1CA2CA3CA4 | |
| SCHEMBL501727 | 0.86 | ALOX15 (0.57) | CA12CA1CA2CA3CA4 | |
| SCHEMBL3132315 | 0.84 | MMP3 (0.44) | CA12CA1CA2CA3CA4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 170 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| CN-107924123-B | Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same | 学校法人关西大学 | 2021-08-06 | — | — | CN | disclosed |
| CN-107533291-B | Compound, resist composition, and resist pattern formation method using same | 三菱瓦斯化学株式会社 | 2021-06-11 | — | — | CN | disclosed |
| EP-3279727-B1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-06-09 | — | — | EP | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| US-20100248167-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100239981-A1 | POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100190104-A1 | METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD | JSR CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100068650-A1 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION | JSR CORPORATION (JP) | 2010-03-18 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2131240-A1 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION | JSR Corporation (JP) | 2009-12-09 | — | — | EP | disclosed |
| EP-2128706-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR Corporation (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | CA12 3727/4885CA1 3866/4885CA2 3898/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CA12 2546/4885CA1 1120/4885CA2 3332/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | CA12 4094/4885CA1 3738/4885CA2 3666/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA12 1606/4885CA1 161/4885CA2 1466/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | CA12 886/4885CA1 764/4885CA2 2466/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA12 1606/4885CA1 161/4885CA2 1466/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.