SCHEMBL557269

SCHEMBL557269

c1ccc2c([S+]3CCCC3)cccc2c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.40
HSD17B10 Q99714 4/20 0.40
CYP2A6 P11509 3/20 0.40
TSHR P16473 2/20 0.40
TDP1 Q9NUW8 1/20 0.40
CYP1A2 P05177 5/20 0.38
HPGD P15428 2/20 0.38
CYP3A4 P08684 1/20 0.38
KEAP1 Q14145 1/20 0.38
HPRT1 P00492 1/20 0.37
HIF1A Q16665 1/20 0.34
CYP1B1 Q16678 1/20 0.34
THRB P10828 1/20 0.34
CYP2C9 P11712 2/20 0.34
CYP2C19 P33261 2/20 0.34
KDM1A O60341 1/20 0.34
NR4A1 P22736 1/20 0.33
NR4A2 P43354 1/20 0.33
NR4A3 Q92570 1/20 0.33
MEN1 O00255 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL6014088 0.82 GPR3 (0.37) ALDH1A1HSD17B10CYP1A2HPGDKEAP1
SCHEMBL12388991 0.71 CYP1A2 (0.43) ALDH1A1CYP2A6TDP1CYP1A2HPGD
SCHEMBL6564717 0.71 IDO1 (0.39) ALDH1A1HSD17B10CYP2A6TSHRHPGD
SCHEMBL113203 0.71 IDO1 (0.52) HSD17B10TSHRTDP1CYP1A2HPGD
SCHEMBL794829 0.71 CYP1A2 (0.52) ALDH1A1CYP2A6TSHRCYP1A2MEN1
Hydrochloric Acid SCHEMBL667919 0.69 IDO1 (0.50) HSD17B10TSHRTDP1CYP1A2HPGD
SCHEMBL2128946 0.68 ALDH1A1 (0.43) ALDH1A1HSD17B10CYP2A6TSHRTDP1
SCHEMBL5973865 0.65 CYP1A2 (0.47) TSHRTDP1CYP1A2CYP2C9CYP2C19
SCHEMBL2742115 0.65 KDM4E (0.38) ALDH1A1SLC6A2SLC6A4SLC6A3
Hydrochloric Acid SCHEMBL5665257 0.65 ACHE (0.38) ALDH1A1TSHRTDP1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 149 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8343708-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2013-01-01 US claimed
CN-108431690-B Actinic-ray-or radiation-sensitive resin composition, film thereof, pattern forming method, and method for manufacturing electronic device 富士胶片株式会社 2021-11-26 CN disclosed
US-11009791-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-05-18 US disclosed
US-20180299777-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-10-18 US disclosed
US-20180217497-A1 PATTERN FORMING METHOD AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9760004-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2017-09-12 US disclosed
US-9760004-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2017-09-12 US disclosed
US-20170205709-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-20 US disclosed
EP-1975714-A1 Positive resist composition and pattern forming method FUJIFILM Corporation (JP) 2008-10-01 EP disclosed
EP-1975716-A2 Positive resist composition and pattern forming method Fujifilm Corporation (JP) 2008-10-01 EP disclosed
US-20080220371-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-09-11 US disclosed
US-20080026314-A1 Silane Compound, Polysiloxane, and Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-01-31 US disclosed
US-7217492-B2 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2007-05-15 US disclosed
US-7162131-B2 Radiation-curable composition, optical waveguide and method for formation thereof JSR CORPORATION (JP) 2007-01-09 US disclosed
EP-1720064-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2006-11-08 EP disclosed
US-20060223001-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-05 US disclosed
US-20060165362-A1 Radiation curable composition, optical waveguide and method for formation thereof JSR CORPORATION (JP) 2006-07-27 US disclosed
EP-1679314-A1 SILANE COMPOUND, POLYSILOXANE AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-07-12 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080220371-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION RARA, RARB, RARG ALDH1A1 771/4885HSD17B10 4193/4885CYP2A6 1263/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.