SCHEMBL5604448

SCHEMBL5604448

CC(=O)OCc1cccc([N+](=O)[O-])c1[N+](=O)[O-]

nearest known ligand 0.50

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
MAOB P27338 1/20 0.50
TSHR P16473 3/20 0.47
GPR35 Q9HC97 2/20 0.47
ALDH1A1 P00352 7/20 0.41
LMNA P02545 1/20 0.41
TDP1 Q9NUW8 2/20 0.41
L3MBTL1 Q9Y468 1/20 0.40
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
MAPT P10636 2/20 0.39
RECQL P46063 1/20 0.39
HTT P42858 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17253265 0.91 ALDH1A1 (0.46) MAOBTSHRGPR35ALDH1A1TDP1
SCHEMBL499373 0.88 GPR35 (0.50) MAOBTSHRGPR35ALDH1A1TDP1
SCHEMBL11025870 0.86 MAOB (0.46) MAOBTSHRGPR35ALDH1A1LMNA
SCHEMBL1108184 0.86 MAOB (0.61) MAOBTSHRALDH1A1L3MBTL1MEN1
SCHEMBL5490051 0.85 GPR35 (0.47) MAOBTSHRGPR35ALDH1A1LMNA
SCHEMBL11062937 0.85 TDP1 (0.53) MAOBTSHRALDH1A1LMNATDP1
SCHEMBL8747352 0.84 MAOB (0.59) MAOBTSHRALDH1A1L3MBTL1MEN1
SCHEMBL11239213 0.84 MAOB (0.44) MAOBTSHRGPR35ALDH1A1LMNA
SCHEMBL28944504 0.84 MMP1 (0.41) MAOBALDH1A1TDP1MEN1KMT2A
SCHEMBL8703265 0.84 TSHR (0.45) MAOBTSHRALDH1A1TDP1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1239332-B1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING PATTERN THEREFROM, AND METHOD OF BURNING COATING FILM THEREOF AZ ELECTRONIC MATERIALS USA (US) 2007-02-21 EP disclosed
US-20060160014-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2006-07-20 US disclosed
US-20050287469-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2005-12-29 US disclosed
EP-1560069-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-08-03 EP disclosed
EP-1548499-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-06-29 EP disclosed
US-6902875-B2 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof CLARIANT FINANCE (BVI) LIMITED (VG) 2005-06-07 US disclosed
US-20040081912-A1 Photosensitive polysilazane composition and method of forming patterned polysilazane film AZ ELECTRONIC MATERIALS USA CORP. 2004-04-29 US disclosed
US-20030113657-A1 Photosensitive ploysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof MERCK PATENT GMBH (DE) 2003-06-19 US disclosed
EP-1239332-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING PATTERN THEREFROM, AND METHOD OF BURNING COATING FILM THEREOF CLARIANT INTERNATIONAL LTD. (CH) 2002-09-11 EP disclosed
EP-1164435-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION AND METHOD OF FORMING PATTERNED POLYSILAZANE FILM TonenGeneral Sekiyu K.K. (JP) 2001-12-19 EP disclosed