Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.40 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | ACHE | P22303 | 3/20 | 0.36 |
| ▸ | KCNH2 | Q12809 | 6/20 | 0.35 |
| ▸ | FAAH | O00519 | 1/20 | 0.35 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.35 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.35 |
| ▸ | ELANE | P08246 | 1/20 | 0.35 |
| ▸ | PRTN3 | P24158 | 1/20 | 0.35 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL565684 | 0.91 | GPR3 (0.41) | GPR3ACHEKCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL565376 | 0.91 | GPR3 (0.41) | GPR3KDM4EALDH1A1TDP1ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL565735 | 0.87 | HTT (0.43) | ALDH1A1TDP1ACHEKCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL565741 | 0.87 | ACHE (0.45) | ALDH1A1ACHEKCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL1130584 | 0.87 | KDM4E (0.40) | KDM4EALDH1A1TDP1ACHEFAAH | |
| SCHEMBL22188507 | 0.86 | KDM4E (0.45) | KDM4EALDH1A1TDP1ACHEFAAH | |
| Trifluoromethanesulfonic Acid SCHEMBL30851370 | 0.85 | KDM4E (0.44) | GPR3KDM4EALDH1A1TDP1ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL1130292 | 0.85 | KDM4E (0.59) | GPR3KDM4EALDH1A1TDP1ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL14834044 | 0.83 | GPR3 (0.42) | GPR3ACHEKCNH2 | |
| SCHEMBL22188512 | 0.82 | ACHE (0.41) | KDM4EALDH1A1TDP1ACHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| CN-112286000-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-12-03 | — | — | CN | disclosed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| US-20240319598-A1 | Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-26 | — | — | US | disclosed |
| EP-4435515-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-25 | — | — | EP | disclosed |
| CN-118620392-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-09-10 | — | — | CN | disclosed |
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-20240152047-A1 | HIGH REFRACTIVE INDEX MATERIALS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2024-05-09 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-1369459-A1 | RADIATION-SENSITIVE COMPOSITION CAPABLE OF HAVING REFRACTIVE INDEX DISTRIBUTION | JSR Corporation (JP) | 2003-12-10 | — | — | EP | disclosed |
| EP-1350814-A1 | RADIATION-SENSITIVE COMPOSITION CHANGING IN REFRACTIVE INDEX AND METHOD OF CHANGING REFRACTIVE INDEX | JSR Corporation (JP) | 2003-10-08 | — | — | EP | disclosed |
| US-20030187119-A1 | Radiation-sensitive composition capable of having refractive index distribution | JSR CORPORATION (JP) | 2003-10-02 | — | — | US | disclosed |
| US-20030171468-A1 | Radiation-sensitive composition changing in refractive index and utilization thereof | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |
| US-20030139486-A1 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR CORPORATION (JP) | 2003-07-24 | — | — | US | disclosed |
| EP-1323742-A2 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR Corporation (JP) | 2003-07-02 | — | — | EP | disclosed |
| EP-1235104-A1 | COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN | JSR Corporation (JP) | 2002-08-28 | — | — | EP | disclosed |
| EP-0880075-B1 | Radiation sensitive resin composition | JSR CORP (JP) | 2001-10-17 | — | — | EP | disclosed |
| US-5958648-A | Radiation sensitive resin composition | JSR CORPORATION (JP) | 1999-09-28 | — | — | US | disclosed |
| EP-0880075-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1998-11-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | GPR3 4236/4885KDM4E 404/4885ALDH1A1 1586/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | GPR3 2766/4885KDM4E 588/4885ALDH1A1 4452/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.