SCHEMBL5670628

SCHEMBL5670628

O=S(=O)(c1ccc(C(c2ccc(S(=O)(=O)C(F)(F)F)cc2)(C(F)(F)F)C(F)(F)F)cc1)C(F)(F)F

nearest known ligand 0.47

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ LMNA P02545 2/20 0.47
▸ MAPK1 P28482 1/20 0.47
▸ HTT P42858 1/20 0.47
▸ SMN1; SMN2 Q16637 1/20 0.47
▸ ALDH1A1 P00352 2/20 0.47
▸ ESR1 P03372 1/20 0.46
▸ ESR2 Q92731 1/20 0.46
▸ PTPRZ1 P23471 1/20 0.46
▸ KIF11 P52732 3/20 0.44
▸ ESPL1 Q14674 1/20 0.39
▸ HSD11B1 P28845 3/20 0.37
▸ POLB P06746 1/20 0.37
▸ MEN1 O00255 1/20 0.36
▸ KMT2A Q03164 1/20 0.36
▸ CA1 P00915 1/20 0.35
▸ CA2 P00918 1/20 0.35
▸ EPAS1 Q99814 4/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8941641 0.89 PTPRZ1 (0.50) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL11685641 0.78 LMNA (0.47) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL10145040 0.78 ALDH1A1 (0.69) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL8941509 0.78 NR3C2 (0.44) LMNAHTTSMN1; SMN2ALDH1A1ESR2
SCHEMBL28554198 0.76 LMNA (0.42) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL517720 0.75 ALDH1A1 (0.52) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL7937243 0.75 ALDH1A1 (0.52) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL1940828 0.74 LMNA (0.47) LMNAMAPK1HTTSMN1; SMN2ALDH1A1
SCHEMBL8598027 0.74 HTR6 (0.61) LMNAALDH1A1ESR1ESR2KIF11
Lithium Ion SCHEMBL7864898 0.73 LMNA (0.50) LMNAMAPK1HTTSMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 — — EP disclosed
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