SCHEMBL5846400

SCHEMBL5846400

OC(C1CCCC(C(O)(C(F)(F)F)C(F)(F)F)C1)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
AR P10275 3/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14527538 1.00 AR (0.31) AR
SCHEMBL10239369 0.89
SCHEMBL12193683 0.87 PDK1 (0.30)
SCHEMBL14417208 0.84
SCHEMBL13917609 0.83 PDK1 (0.33) AR
SCHEMBL10235395 0.83
SCHEMBL91140 0.81 PDK1 (0.36) AR
Methacrylic Acid SCHEMBL16817744 0.81 PDK1 (0.30)
SCHEMBL10234952 0.80
SCHEMBL14537198 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230229083-A1 PHOTORESIST COMPOSITIONS FOR EUV AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-07-20 US disclosed
US-8741538-B2 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-03 US disclosed
US-8741538-B2 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-03 US disclosed
US-20130231491-A1 FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-05 US disclosed
US-8114571-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114571-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114570-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114570-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8030515-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed
US-20070172757-A1 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2007-07-26 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
EP-1780199-A1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
US-7138550-B2 Bridged carbocyclic compounds and methods of making and using same AIR PRODUCTS AND CHEMICALS, INC. (US) 2006-11-21 US disclosed
US-20050037289-A1 monomers that can be homopolymerized or copolymerized with other reactive components to make resins within sub-200 nanometer (nm) photoresist compositions VERSUM MATERIALS US, LLC 2005-02-17 US disclosed
EP-1505050-A1 Bridged carbocyclic compounds and methods of making and using same AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-02-09 EP disclosed
US-20040122179-A1 Structures providing low absorbing polymers at 157 nm wavelengths CORNELL RESEARCH FOUNDATION, INC. 2004-06-24 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20050037289-A1 monomers that can be homopolymerized or copolymerized with other reactive components to make resins within sub-200 nanometer (nm) photoresist compositions SUB1, CAD, PARP10 AR 3775/4885
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST AR 3644/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.