SCHEMBL59186

SCHEMBL59186

Cc1ccc(S(=O)(=O)OCc2ccccc2[N+](=O)[O-])cc1

nearest known ligand 0.49

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.49
HTT P42858 2/20 0.49
MAPT P10636 1/20 0.49
TSHR P16473 1/20 0.45
MAOB P27338 1/20 0.45
PAX8 Q06710 1/20 0.45
ACHE P22303 1/20 0.43
CA12 O43570 1/20 0.43
CA9 Q16790 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.42
MEN1 O00255 1/20 0.42
RAB9A P51151 1/20 0.42
KMT2A Q03164 1/20 0.42
HPGD P15428 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28856088 0.92 ALDH1A1 (0.44) ALDH1A1HTTMAPTTSHRMAOB
SCHEMBL30355298 0.91 ALDH1A1 (0.43) ALDH1A1HTTMAPTTSHRMAOB
SCHEMBL244116 0.90 ALDH1A1 (0.49) ALDH1A1HTTTSHRMAOBCA12
SCHEMBL498498 0.88 TSHR (0.45) ALDH1A1HTTMAPTTSHRPAX8
SCHEMBL32679667 0.87 ALDH1A1 (0.48) ALDH1A1HTTMAPTTSHRPAX8
SCHEMBL6105419 0.87 ALDH1A1 (0.48) ALDH1A1HTTMAPTTSHRPAX8
SCHEMBL5527025 0.86 MMP1 (0.53) ALDH1A1HTTMAPTTSHRMAOB
SCHEMBL8061919 0.85 VDR (0.47) ALDH1A1HTTACHECA12CA9
SCHEMBL556153 0.84 ACHE (0.46) TSHRACHEMEN1RAB9AKMT2A
SCHEMBL27966350 0.84 MAPT (0.48) ALDH1A1HTTMAPTPAX8ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 4117 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121873631-B Spin-on carbon composition, semiconductor preparation method and semiconductor device Jiageng Innovation Laboratory (CN) 2026-05-26 CN claimed
CN-122011922-A Bottom anti-reflection coating composition and preparation and application thereof 嘉庚创新实验室 2026-05-12 CN claimed
US-12535736-B2 Anti-reflective hard mask composition CHEMPOLE CO., LTD. (KR) 2026-01-27 US claimed
US-20250334883-A1 RESIST UNDERLAYER COMPOSITIONS, AND METHODS OF FORMING PATTERNS USING THE COMPOSITIONS SAMSUNG SDI CO LTD (KR) 2025-10-30 US claimed
CN-119735984-B Antireflective composition, antireflective film, patterning process, patterned substrate, semiconductor device, and method for manufacturing the same 珠海基石科技有限公司 2025-05-23 CN claimed
CN-119735984-A Antireflective composition, antireflective film, patterning process, patterned substrate, semiconductor device, and method for manufacturing the same 珠海基石科技有限公司 2025-04-01 CN claimed
CN-119620541-A Preparation and application of bottom anti-reflection coating with high etching rate 儒芯微电子材料(上海)有限公司 2025-03-14 CN claimed
WO-2024205936-A1 GAS RELEASING UNDERLAYERS FOR PHOTOPATTERNABLE ORGANOMETALLIC RESIST INPRIA CORPORATION (US) 2024-10-03 WO claimed
US-20240319599-A1 GAS RELEASING UNDERLAYERS FOR PHOTOPATTERNABLE ORGANOMETALLIC RESIST JSR CORPORATION (JP) 2024-09-26 US claimed
US-20240294771-A1 ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER Tan Kah Kee Innovation Laboratory (CN) 2024-09-05 US claimed
US-20020160318-A1 Method for structuring a photoresist layer POLARIS INNOVATIONS LIMITED (IE) 2002-10-31 US claimed
US-6461717-B1 Aperture fill SHIPLEY COMPANY, L.L.C. 2002-10-08 US claimed
US-6277750-B1 MIXTURE OF POLYVINYL BUTYRAL COPOLYMER DYE AND SOLVENT; FOR PHOTOLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2001-08-21 US claimed
WO-2001029837-A1 MEDIUM FOR FLUORESCENT READ-ONLY MULTILAYER OPTICAL INFORMATION CARRIER AND ITS MANUFACTURING METHOD TRID STORE IP, LLC (US) 2001-04-26 WO claimed
EP-1046958-A1 COMPOSITION FOR BOTTOM REFLECTION PREVENTIVE FILM AND NOVEL POLYMERIC DYE FOR USE IN THE SAME Clariant International Ltd. (CH) 2000-10-25 EP claimed
EP-0762207-B1 Positive working photosensitive composition and method of producing relief structures BASF AG (DE) 2000-04-12 EP claimed
US-5916728-A RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1999-06-29 US claimed
US-5783354-A QUATERNARY AMMONIUM COMPOUNDS BASF AKTIENGESELLSCHAFT (DE) 1998-07-21 US claimed
US-5169741-A Exposure to light of about 248.4 nm; activation of the photosensitizer by acid; high transparency; fine patterns; semiconductors MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1992-12-08 US claimed
EP-0425142-A2 Positive acting photoresist and method of producing same ROHM AND HAAS COMPANY (US) 1991-05-02 EP claimed