Water

Water

SCHEMBL597350

CCC[N+](CCC)(CCC)CCO.[OH-]

nearest known ligand 0.62

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 4/20 0.62
DNM1 Q05193 2/20 0.44
SLC22A2 O15244 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
LMNA P02545 3/20 0.38
MEN1 O00255 2/20 0.38
KMT2A Q03164 2/20 0.38
ALDH1A1 P00352 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TSHR P16473 1/20 0.38
CYP3A4 P08684 1/20 0.38
SLC5A7 Q9GZV3 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL25183170 1.00 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
Water SCHEMBL3308149 1.00 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
SCHEMBL992673 0.97 SLC22A1 (0.67) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
SCHEMBL2138636 0.97 SLC22A1 (0.67) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
SCHEMBL14839961 0.97 SLC22A1 (0.67) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
Bromide SCHEMBL18954325 0.94 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
Bromide SCHEMBL31435645 0.94 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
Fluoride Ion SCHEMBL17870609 0.94 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
Water SCHEMBL27424443 0.94 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA
Hydrochloric Acid SCHEMBL7155406 0.94 SLC22A1 (0.62) SLC22A1DNM1SLC22A2SMN1; SMN2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 518 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250026960-A1 POLISHING SLURRY COMPOSITION KCTECH CO.,LTD. (KR) 2025-01-23 US claimed
CN-118339245-A Polishing slurry composition 凯斯科技股份有限公司 2024-07-12 CN claimed
CN-117946812-A Cleaning composition 安集微电子科技(上海)股份有限公司 2024-04-30 CN claimed
WO-2024083019-A1 CLEANING COMPOSITION 安集微电子科技(上海)股份有限公司 2024-04-25 WO claimed
CN-117106528-A Semiconductor substrate cleaning liquid composition JL化学株式会社 2023-11-24 CN claimed
WO-2023121037-A1 POLISHING SLURRY COMPOSITION 주식회사 케이씨텍 2023-06-29 WO claimed
CN-110777381-B Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2022-10-04 CN claimed
CN-111825105-B Preparation of Y molecular sieve with FAU structure by guide agent method 中国科学院大连化学物理研究所 2022-08-19 CN claimed
CN-111825103-B Fluorine-containing high-silicon Y molecular sieve and preparation method thereof 中国科学院大连化学物理研究所 2022-04-12 CN claimed
CN-111825102-B Dry glue conversion synthesis method of high-silicon Y molecular sieve 中国科学院大连化学物理研究所 2022-03-22 CN claimed
EP-1610185-A2 Composition and method using same for removing residue from a substrate AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-12-28 EP claimed
EP-1027415-A1 CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE Kyzen Corporation (US) 2000-08-16 EP claimed
WO-1999016855-A1 CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE KYZEN CORPORATION (US) 1999-04-08 WO claimed
US-5846695-A Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1998-12-08 US claimed
US-5693599-A Flux washing agent MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1997-12-02 US claimed
EP-0463423-B1 Surface treating agent for aluminum line pattern substrate MITSUBISHI GAS CHEMICAL CO (JP) 1995-08-30 EP claimed
US-5174816-A SURFACE TREATING AGENT FOR ALUMINUM LINE PATTERN SUBSTRATE MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1992-12-29 US claimed
EP-0463423-A1 Surface treating agent for aluminum line pattern substrate MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1992-01-02 EP claimed
US-4339340-A HYDROXYLAKYL/TRIALKYLAMMONIUM HYDROXIDE TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) 1982-07-13 US claimed
US-4239661-A HYDROXYALKYL TRIALKYLAMMONIUM HYDROXIDE TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) 1980-12-16 US claimed