Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | SLC6A4 | P31645 | 8/20 | 0.40 |
| ▸ | SLC6A2 | P23975 | 6/20 | 0.40 |
| ▸ | SLC6A3 | Q01959 | 4/20 | 0.40 |
| ▸ | HTR2A | P28223 | 3/20 | 0.40 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.40 |
| ▸ | HTR1A | P08908 | 1/20 | 0.40 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.40 |
| ▸ | HTR2B | P41595 | 1/20 | 0.40 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.40 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.34 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.33 |
| ▸ | SPHK2 | Q9NRA0 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL596661 | 1.00 | SMN1; SMN2 (0.42) | SMN1; SMN2SLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL6008849 | 0.87 | SLC6A2 (0.41) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 | |
| SCHEMBL597741 | 0.84 | ADRA2C (0.41) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 | |
| SCHEMBL3305211 | 0.84 | SMN1; SMN2 (0.58) | SMN1; SMN2SLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL8145700 | 0.84 | SMN1; SMN2 (0.58) | SMN1; SMN2SLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL599223 | 0.84 | ADRA2C (0.41) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 | |
| SCHEMBL10330624 | 0.83 | SLC6A2 (0.47) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 | |
| SCHEMBL28930616 | 0.82 | SLC6A4 (0.35) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 | |
| SCHEMBL3984484 | 0.81 | EPHX1 (0.48) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 | |
| SCHEMBL40488 | 0.80 | EPHX1 (0.57) | SLC6A4SLC6A2SLC6A3HTR2AADRB2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8541158-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| EP-2100887-B1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-07-03 | — | — | EP | disclosed |
| US-8343694-B2 | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-01 | — | — | US | disclosed |
| CN-101477307-B | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN ETSU EHEMICAL CO LTD | 2012-12-12 | — | — | CN | disclosed |
| EP-2112554-B1 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-06-06 | — | — | EP | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8062828-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8048610-B2 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| CN-101477307-A | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2009-07-08 | — | — | CN | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | SMN1; SMN2 1917/4885SLC6A4 1352/4885SLC6A2 1932/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | SMN1; SMN2 1655/4885SLC6A4 1474/4885SLC6A2 2184/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | SMN1; SMN2 4267/4885SLC6A4 2541/4885SLC6A2 2586/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.