Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRA2C | P18825 | 1/20 | 0.41 |
| ▸ | SLC6A4 | P31645 | 9/20 | 0.38 |
| ▸ | SLC6A2 | P23975 | 7/20 | 0.38 |
| ▸ | SLC6A3 | Q01959 | 5/20 | 0.38 |
| ▸ | HTR2A | P28223 | 3/20 | 0.38 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.38 |
| ▸ | HTR1A | P08908 | 1/20 | 0.38 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.38 |
| ▸ | HTR2B | P41595 | 1/20 | 0.38 |
| ▸ | EPHA2 | P29317 | 1/20 | 0.33 |
| ▸ | CHEK1 | O14757 | 3/20 | 0.32 |
| ▸ | REN | P00797 | 1/20 | 0.32 |
| ▸ | KDR | P35968 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL597741 | 1.00 | ADRA2C (0.41) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL950714 | 0.94 | ADRA2C (0.40) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL8510441 | 0.90 | ADRA2C (0.45) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL6008849 | 0.89 | SLC6A2 (0.41) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL597657 | 0.84 | SMN1; SMN2 (0.42) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL596661 | 0.84 | SMN1; SMN2 (0.42) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL10330624 | 0.83 | SLC6A2 (0.47) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL2893125 | 0.81 | SLC6A2 (0.36) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL2892626 | 0.81 | SLC6A2 (0.36) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A | |
| SCHEMBL11091934 | 0.81 | SLC6A4 (0.37) | ADRA2CSLC6A4SLC6A2SLC6A3HTR2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8541158-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| EP-2100887-B1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-07-03 | — | — | EP | disclosed |
| US-8343694-B2 | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-01 | — | — | US | disclosed |
| CN-101477307-B | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN ETSU EHEMICAL CO LTD | 2012-12-12 | — | — | CN | disclosed |
| EP-2112554-B1 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-06-06 | — | — | EP | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8062828-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8048610-B2 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | ADRA2C 3693/4885SLC6A4 1352/4885SLC6A2 1932/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | ADRA2C 4342/4885SLC6A4 1474/4885SLC6A2 2184/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | ADRA2C 2642/4885SLC6A4 2541/4885SLC6A2 2586/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.