SCHEMBL6015155

SCHEMBL6015155

Cc1c(I)ccc(C=O)c1C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.39
TSHR P16473 1/20 0.39
KCNJ1 P48048 2/20 0.39
TDP1 Q9NUW8 2/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
LMNA P02545 1/20 0.36
THRB P10828 1/20 0.36
BLM P54132 1/20 0.36
MCL1 Q07820 1/20 0.35
ERN1 O75460 3/20 0.34
CYP2A6 P11509 1/20 0.32
TYR P14679 2/20 0.31
TRIM24 O15164 1/20 0.31
TRIM33 Q9UPN9 1/20 0.31
GFER P55789 1/20 0.31
HKDC1 Q2TB90 1/20 0.31
RXFP1 Q9HBX9 1/20 0.31
HCRTR1 O43613 1/20 0.30
HCRTR2 O43614 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Cyanide SCHEMBL28314183 0.94 KCNJ1 (0.36) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL29818681 0.84 ALDH1A1 (0.50) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL4353272 0.84 ALDH1A1 (0.50) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL6258536 0.79 ALDH1A1 (0.48) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL21218770 0.76 ACHE (0.33) TSHRTDP1
SCHEMBL28669143 0.75 ALDH1A1 (0.42) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL366594 0.75 ALDH1A1 (0.48) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL6015156 0.74 ALDH1A1 (0.43) ALDH1A1TSHRKCNJ1TDP1MEN1
Hydrochloric Acid SCHEMBL28212658 0.73 ALDH1A1 (0.46) ALDH1A1TSHRKCNJ1TDP1MEN1
SCHEMBL77591 0.71 TSHR (0.40) ALDH1A1TSHRKCNJ1TDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-11480877-B2 Resist composition, method for forming resist pattern, and polyphenol compound used therein MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-10-25 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
CN-107533290-B Resist base material, resist composition, and method for forming resist pattern 三菱瓦斯化学株式会社 2021-04-09 CN disclosed
EP-3279728-B1 RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-17 EP disclosed
CN-107428646-B Compounds, resins, and methods for their purification, and uses thereof 三菱瓦斯化学株式会社 2021-03-02 CN disclosed
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-31 US disclosed
US-10816898-B2 2020-10-27 US disclosed
US-10747112-B2 Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-18 US disclosed
EP-3279190-B1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN MITSUBISHI GAS CHEMICAL CO (JP) 2020-08-12 EP disclosed
US-9122153-B2 Cyclic compound, method for producing same, composition, and method for forming resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2015-09-01 US disclosed
US-20140308615-A1 CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-10-16 US disclosed
EP-2743249-A1 CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2014-06-18 EP disclosed
US-6984740-B2 Symmetrical halogenated and alkylated alditol derivatives and compositions and articles containing same MILLIKEN & COMPANY (US) 2006-01-10 US disclosed
EP-1425342-A4 NOVEL SYMMETRICAL SUBSTITUTED BENZALDEHYDE ALDITOL DERIVATIVES AND COMPOSITIONS AND ARTICLES CONTAINING SAME MILLIKEN & CO (US) 2005-01-05 EP disclosed
EP-1425342-A2 NOVEL SYMMETRICAL SUBSTITUTED BENZALDEHYDE ALDITOL DERIVATIVES AND COMPOSITIONS AND ARTICLES CONTAINING SAME Milliken & Company (US) 2004-06-09 EP disclosed
US-20030127631-A1 Novel symmetrical halogenated and alkylated alditol derivatives and compositions and articles containing same ANDERSON JOHN D (US) 2003-07-10 US disclosed
US-6547988-B2 Plastic additives which are useful as nucleating agents and which are especially useful for improving the optical properties of polymeric materials; also useful as gelling agents for water and organic solvents MILLIKEN & COMPANY 2003-04-15 US disclosed
US-20030008951-A1 Novel symmetrical halogenated and alkylated alditol derivatives and compositions and articles containing same MILLIKEN & COMPANY 2003-01-09 US disclosed
WO-2002077086-A2 NOVEL SYMMETRICAL SUBSTITUTED BENZALDEHYDE ALDITOL DERIVATIVES AND COMPOSITIONS AND ARTICLES CONTAINING SAME MILLIKEN & COMPANY (US) 2002-10-03 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11480877-B2 Resist composition, method for forming resist pattern, and polyphenol compound used therein SLC11A2, ABCC1, FBL ALDH1A1 1809/4885TSHR 4741/4885KCNJ1 1572/4885
US-20030008951-A1 Novel symmetrical halogenated and alkylated alditol derivatives and compositions and articles containing same ADH1C, ADH1A, ALDOA ALDH1A1 69/4885TSHR 2045/4885KCNJ1 1516/4885
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD C9, C1R, RAD51 ALDH1A1 1553/4885TSHR 1302/4885KCNJ1 1173/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R ALDH1A1 1540/4885TSHR 1292/4885KCNJ1 1282/4885
US-10747112-B2 Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method C5, PRMT9, C9 ALDH1A1 1890/4885TSHR 464/4885KCNJ1 182/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R ALDH1A1 1540/4885TSHR 1292/4885KCNJ1 1282/4885
US-10816898-B2 C5, C9, H1-0 ALDH1A1 135/4885TSHR 2223/4885KCNJ1 4047/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.