Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Benzoin. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 5/20 | 0.64 |
| ▸ | CES2 | O00748 | 2/20 | 0.64 |
| ▸ | CES1 | P23141 | 2/20 | 0.64 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.55 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.55 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.51 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.51 |
| ▸ | RECQL | P46063 | 1/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.44 |
| ▸ | TP53 | P04637 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.44 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | PKM | P14618 | 1/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.43 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 2/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.42 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.42 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Benzoin SCHEMBL710405 | 0.89 | LMNA (0.75) | LMNACES2CES1MAPK1CYP2D6 | |
| SCHEMBL10405150 | 0.86 | LMNA (0.45) | LMNACES2CES1MAPK1CYP2D6 | |
| Benzoin SCHEMBL6331637 | 0.86 | LMNA (0.57) | LMNACES2CES1MAPK1CYP2D6 | |
| Mandelic Acid SCHEMBL16499233 | 0.86 | LMNA (0.60) | LMNAMAPK1CYP2D6ALDH1A1KDM4E | |
| SCHEMBL66647 | 0.85 | LMNA (0.74) | LMNACES2CES1MAPK1ALDH1A1 | |
| Benzoin SCHEMBL28292944 | 0.85 | CES2 (0.81) | LMNACES2CES1MAPK1ALDH1A1 | |
| SCHEMBL66803 | 0.85 | LMNA (0.74) | LMNACES2CES1MAPK1ALDH1A1 | |
| Benzoin SCHEMBL10506828 | 0.85 | LMNA (0.64) | LMNACES2CES1MAPK1CYP2D6 | |
| SCHEMBL4893122 | 0.84 | MAPK1 (0.51) | LMNACES2CES1MAPK1CYP2D6 | |
| Benzoin SCHEMBL384248 | 0.84 | LMNA (0.78) | LMNACES2CES1MAPK1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 5229 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3940747-B1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | YOUNG CHANG CHEMICAL CO LTD (KR) | 2026-05-06 | — | — | EP | claimed |
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-16 | — | — | US | claimed |
| US-12535739-B2 | Method of forming photoresist pattern | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-27 | — | — | US | claimed |
| US-12535736-B2 | Anti-reflective hard mask composition | CHEMPOLE CO., LTD. (KR) | 2026-01-27 | — | — | US | claimed |
| US-20260008931-A1 | ORGANIC POLYMER, SEMICONDUCTOR HARD MASK COMPOSITION COMPRISING SAME, AND PATTERNING METHOD USING SAME | HUNETPLUS CO LTD (KR) | 2026-01-08 | — | — | US | claimed |
| US-20250334883-A1 | RESIST UNDERLAYER COMPOSITIONS, AND METHODS OF FORMING PATTERNS USING THE COMPOSITIONS | SAMSUNG SDI CO LTD (KR) | 2025-10-30 | — | — | US | claimed |
| EP-3732536-B1 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND CROSS LINKERS AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE | MERCK PATENT GMBH (DE) | 2025-06-04 | — | — | EP | claimed |
| CN-119620541-A | Preparation and application of bottom anti-reflection coating with high etching rate | 儒芯微电子材料（上海）有限公司 | 2025-03-14 | — | — | CN | claimed |
| EP-4464733-A1 | ORGANIC POLYMER, SEMICONDUCTOR HARD MASK COMPOSITION COMPRISING SAME, AND PATTERNING METHOD USING SAME | Hunetplus Co., Ltd. (KR) | 2024-11-20 | — | — | EP | claimed |
| CN-118974134-A | Organic polymer, hard mask composition for semiconductor applications comprising the same, and patterning method using the same | 胡网加成股份有限公司 | 2024-11-15 | — | — | CN | claimed |
| US-5650261-A | Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system | ROHM AND HAAS COMPANY (US) | 1997-07-22 | — | — | US | claimed |
| US-5585222-A | Resist composition and process for forming resist pattern | FUJITSU LIMITED (JP) | 1996-12-17 | — | — | US | claimed |
| EP-0524187-B1 | POSITIVE WORKING RESIST COMPOSITIONS AND THEIR UTILITY IN DRY FILM PHOTORESISTS | DU PONT (US) | 1996-07-10 | — | — | EP | claimed |
| EP-0524250-A1 | RESIST MATERIAL FOR USE IN THICK FILM RESISTS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1993-01-27 | — | — | EP | claimed |
| EP-0524187-A1 | POSITIVE WORKING RESIST COMPOSITIONS AND THEIR UTILITY IN DRY FILM PHOTORESISTS. | DU PONT (US) | 1993-01-27 | — | — | EP | claimed |
| US-5120633-A | Polymers with acid-labile ester/ether pendant groups and acid-generating photoinitiators; positives; printed circuits; resolution | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1992-06-09 | — | — | US | claimed |
| US-5077174-A | Aqueous development, stripping | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1991-12-31 | — | — | US | claimed |
| WO-1991015808-A1 | RESIST MATERIAL FOR USE IN THICK FILM RESISTS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1991-10-17 | — | — | WO | claimed |
| WO-1991015809-A1 | POSITIVE WORKING RESIST COMPOSITIONS AND THEIR UTILITY IN DRY FILM PHOTORESISTS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1991-10-17 | — | — | WO | claimed |
| EP-0425142-A2 | Positive acting photoresist and method of producing same | ROHM AND HAAS COMPANY (US) | 1991-05-02 | — | — | EP | claimed |