SCHEMBL6139851

SCHEMBL6139851

CC(C)(C)Oc1ccc(S(OS(=O)(=O)c2ccccc2)(c2ccc(OC(C)(C)C)cc2)c2cccnc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KEAP1 Q14145 3/20 0.41
NFE2L2 Q16236 3/20 0.41
KDM4E B2RXH2 1/20 0.38
NAPRT Q6XQN6 1/20 0.38
LMNA P02545 2/20 0.38
ABCC9 O60706 1/20 0.37
ABCC8 Q09428 1/20 0.37
KCNJ11 Q14654 1/20 0.37
KCNJ8 Q15842 1/20 0.37
SMN1; SMN2 Q16637 3/20 0.36
TSHR P16473 2/20 0.36
HTT P42858 2/20 0.36
CYP3A4 P08684 2/20 0.36
HTR6 P50406 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
ALDH1A1 P00352 3/20 0.36
MAPT P10636 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140372 0.93 ALDH1A1 (0.39) KEAP1NFE2L2NAPRTLMNAABCC9
SCHEMBL6140865 0.93 ALDH1A1 (0.39) KEAP1NFE2L2NAPRTLMNAABCC9
SCHEMBL6140787 0.92 ALDH1A1 (0.45) KEAP1NFE2L2NAPRTLMNASMN1; SMN2
SCHEMBL3197600 0.88 TDP1 (0.40) LMNASMN1; SMN2HTTHTR6CYP2C19
SCHEMBL8589751 0.86 ABCC9 (0.41) KEAP1NFE2L2NAPRTLMNAABCC9
SCHEMBL6140364 0.84 NAPRT (0.52) KEAP1NFE2L2KDM4ENAPRTSMN1; SMN2
SCHEMBL6140212 0.83 NAMPT (0.39) KEAP1NFE2L2KDM4ELMNATSHR
SCHEMBL65270 0.83 HTT (0.45) KEAP1NFE2L2LMNASMN1; SMN2HTT
SCHEMBL64770 0.83 HTT (0.45) KEAP1NFE2L2LMNASMN1; SMN2HTT
SCHEMBL6139987 0.82 SMN1; SMN2 (0.46) KEAP1NFE2L2LMNASMN1; SMN2TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed