Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TLR4 | O00206 | 1/20 | 0.46 |
| ▸ | TLR2 | O60603 | 1/20 | 0.46 |
| ▸ | F2 | P00734 | 5/20 | 0.45 |
| ▸ | NOS3 | P29474 | 1/20 | 0.43 |
| ▸ | NOS1 | P29475 | 1/20 | 0.43 |
| ▸ | NOS2 | P35228 | 1/20 | 0.43 |
| ▸ | GPR132 | Q9UNW8 | 1/20 | 0.43 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | MAOB | P27338 | 4/20 | 0.41 |
| ▸ | CA12 | O43570 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 1/20 | 0.41 |
| ▸ | CA4 | P22748 | 1/20 | 0.41 |
| ▸ | CA5A | P35218 | 1/20 | 0.41 |
| ▸ | CA7 | P43166 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 1/20 | 0.41 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6140191 | 0.91 | NOS3 (0.49) | TLR4TLR2F2NOS3NOS1 | |
| SCHEMBL6139950 | 0.90 | NOS3 (0.43) | TLR4TLR2F2NOS3NOS1 | |
| SCHEMBL6140063 | 0.89 | NOS3 (0.38) | TLR4TLR2F2NOS3NOS1 | |
| SCHEMBL6140165 | 0.83 | PTPN1 (0.40) | F2GPR132LMNAMAOBSMN1; SMN2 | |
| SCHEMBL6140456 | 0.83 | TLR4 (0.47) | TLR4TLR2GPR132SMN1; SMN2MEN1 | |
| SCHEMBL6140802 | 0.81 | NOS3 (0.41) | TLR4TLR2F2NOS3NOS1 | |
| SCHEMBL6140433 | 0.81 | NOS3 (0.41) | TLR4TLR2F2NOS3NOS1 | |
| SCHEMBL6140453 | 0.81 | NOS3 (0.45) | TLR4TLR2F2NOS3NOS1 | |
| SCHEMBL6140818 | 0.78 | CA12 (0.42) | F2LMNACA12CA1CA2 | |
| SCHEMBL6140338 | 0.78 | RORC (0.41) | TLR4TLR2F2NOS3NOS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6955939-B1 | Memory element formation with photosensitive polymer dielectric | ADVANCED MICRO DEVICES, INC. (US) | 2005-10-18 | — | — | US | disclosed |
| US-6878961-B2 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. (US) | 2005-04-12 | — | — | US | disclosed |
| US-20050045877-A1 | PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-03-03 | — | — | US | disclosed |
| US-6825060-B1 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. | 2004-11-30 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| US-5847218-A | Sulfonium salts and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-08 | — | — | US | disclosed |