SCHEMBL6139950

SCHEMBL6139950

CCc1ccc(S(=O)(=O)[O-])cc1.c1cc(OCc2ccncc2)cc([S+](c2cccc(OCc3ccncc3)c2)c2cccc(OCc3ccncc3)c2)c1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NOS3 P29474 1/20 0.43
NOS1 P29475 1/20 0.43
NOS2 P35228 1/20 0.43
TLR4 O00206 1/20 0.43
TLR2 O60603 1/20 0.43
SMN1; SMN2 Q16637 2/20 0.41
KMT2A Q03164 2/20 0.41
MEN1 O00255 1/20 0.41
MAPK1 P28482 1/20 0.41
HTT P42858 1/20 0.41
F10 P00742 1/20 0.40
CYP27B1 O15528 1/20 0.40
CYP24A1 Q07973 1/20 0.40
LMNA P02545 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
GRM2 Q14416 1/20 0.39
SLC2A1 P11166 2/20 0.38
HTR6 P50406 1/20 0.38
MAOB P27338 5/20 0.38
F2 P00734 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140191 0.90 NOS3 (0.49) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140710 0.90 TLR4 (0.46) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140119 0.86 LMNA (0.44) SMN1; SMN2KMT2AHTTCYP27B1CYP24A1
SCHEMBL6140242 0.84 TLR4 (0.43) TLR4TLR2SMN1; SMN2KMT2AMEN1
SCHEMBL6140063 0.81 NOS3 (0.38) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140802 0.81 NOS3 (0.41) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140433 0.81 NOS3 (0.41) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140453 0.81 NOS3 (0.45) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140338 0.79 RORC (0.41) NOS3NOS1NOS2TLR4TLR2
SCHEMBL6140075 0.79 RORC (0.41) NOS3NOS1NOS2TLR4TLR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed