Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | VDR | P11473 | 1/20 | 0.53 |
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.50 |
| ▸ | MAPT | P10636 | 3/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.50 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.50 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.50 |
| ▸ | LMNA | P02545 | 2/20 | 0.50 |
| ▸ | HTT | P42858 | 1/20 | 0.50 |
| ▸ | HPGD | P15428 | 4/20 | 0.48 |
| ▸ | CYP2D6 | P10635 | 3/20 | 0.48 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.48 |
| ▸ | MEN1 | O00255 | 1/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.48 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.48 |
| ▸ | CASP1 | P29466 | 1/20 | 0.48 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.45 |
| ▸ | USP2 | O75604 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64367 | 0.87 | TSHR (0.61) | VDRALDH1A1KDM4EMAPTL3MBTL1 | |
| SCHEMBL66140 | 0.81 | ERCC1 (0.50) | VDRALDH1A1KDM4EMAPTTDP1 | |
| SCHEMBL9810942 | 0.81 | TDP1 (0.64) | VDRALDH1A1KDM4EMAPTTDP1 | |
| Phthalimide SCHEMBL217178 | 0.79 | CASP3 (0.55) | VDRALDH1A1KDM4EMAPTL3MBTL1 | |
| SCHEMBL932442 | 0.79 | SMN1; SMN2 (0.73) | ALDH1A1KDM4EMAPTL3MBTL1TDP1 | |
| Toluene SCHEMBL180606 | 0.79 | SMN1; SMN2 (0.65) | ALDH1A1KDM4EMAPTL3MBTL1TDP1 | |
| SCHEMBL13836876 | 0.79 | SMN1; SMN2 (0.73) | ALDH1A1KDM4EMAPTL3MBTL1TDP1 | |
| Benzene SCHEMBL5085625 | 0.79 | SMN1; SMN2 (0.64) | ALDH1A1KDM4EMAPTL3MBTL1TDP1 | |
| SCHEMBL31313 | 0.79 | GAA (0.62) | ALDH1A1KDM4EMAPTL3MBTL1TDP1 | |
| SCHEMBL11432043 | 0.79 | GAA (0.62) | ALDH1A1KDM4EMAPTL3MBTL1TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 390 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119364669-B | Substrate material surface gold plating treatment process in EBGA process | 深圳市芯海微电子有限公司 | 2025-03-25 | — | — | CN | claimed |
| CN-119528957-A | Zirconium metal oxide nanocluster photoresist material modified by fluorine-containing aromatic acid ligand, and preparation method and application thereof | 山东大学 | 2025-02-28 | — | — | CN | claimed |
| CN-119414657-A | Fluorine-containing titanium oxide nanoparticle photoresist material, preparation method thereof and application thereof in photoetching technology | 山东大学 | 2025-02-11 | — | — | CN | claimed |
| CN-119364669-A | Substrate material surface gold plating treatment process in EBGA process | 深圳市芯海微电子有限公司 | 2025-01-24 | — | — | CN | claimed |
| CN-118909215-A | Photo-acid-production catalyzed polyimide microsphere and preparation method thereof | 山东大学 | 2024-11-08 | — | — | CN | claimed |
| CN-118732392-A | Photoresist composition and preparation method thereof | 万华化学集团股份有限公司 | 2024-10-01 | — | — | CN | claimed |
| CN-113744927-B | Photo-welding method for metal nanowire, metal transparent conductive electrode and metal nanowire ink | 暨南大学 | 2024-06-28 | — | — | CN | claimed |
| CN-117518718-A | Photoresist composition and preparation method of driving substrate | TCL华星光电技术有限公司 | 2024-02-06 | — | — | CN | claimed |
| CN-111880371-B | Photoresist and method for patterning imine material | 常州华睿芯材科技有限公司 | 2022-05-03 | — | — | CN | claimed |
| CN-113912846-A | Polyamide acid resin, preparation method thereof and negative photoresist prepared from same | 上海极紫科技有限公司 | 2022-01-11 | — | — | CN | claimed |
| CN-113861415-A | Polyamide acid resin capable of imidizing at low temperature for negative photoresist and preparation method thereof | 上海极紫科技有限公司 | 2021-12-31 | — | — | CN | claimed |
| CN-113744927-A | Metal nanowire optical welding method, metal transparent conductive electrode and metal nanowire printing ink | 暨南大学 | 2021-12-03 | — | — | CN | claimed |
| CN-111880371-A | Photoresist and method for patterning imine material | 清华大学 | 2020-11-03 | — | — | CN | claimed |
| CN-122032829-A | Method for applying ultraviolet curing adhesive on surface of porous substrate and porous substrate | 江苏正力新能电池技术股份有限公司 | 2026-05-15 | — | — | CN | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| EP-0445058-B1 | Speed enhancers for acid sensitized resists | IBM (US) | 1997-04-23 | — | — | EP | disclosed |
| US-5164278-A | Aromatic hydroxy compound | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1992-11-17 | — | — | US | disclosed |
| EP-0445058-A1 | Speed enhancers for acid sensitized resists | International Business Machines Corporation (US) | 1991-09-04 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | VDR 4124/4885ALDH1A1 841/4885KDM4E 402/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.