Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Phthalimide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CASP3 | P42574 | 1/20 | 0.55 |
| ▸ | CASP2 | P42575 | 1/20 | 0.55 |
| ▸ | CASP7 | P55210 | 1/20 | 0.55 |
| ▸ | CASP6 | P55212 | 1/20 | 0.55 |
| ▸ | CASP8 | Q14790 | 1/20 | 0.55 |
| ▸ | GSK3B | P49841 | 1/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.50 |
| ▸ | MAPT | P10636 | 3/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.50 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.50 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.50 |
| ▸ | LMNA | P02545 | 2/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.50 |
| ▸ | HTT | P42858 | 1/20 | 0.50 |
| ▸ | CYP2D6 | P10635 | 3/20 | 0.48 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.48 |
| ▸ | MEN1 | O00255 | 2/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.48 |
| ▸ | HPGD | P15428 | 2/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phthalimide SCHEMBL219747 | 0.85 | SMN1; SMN2 (0.64) | CASP3CASP2CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL30722317 | 0.85 | SMN1; SMN2 (0.64) | CASP3CASP2CASP7CASP6CASP8 | |
| SCHEMBL112692 | 0.84 | ALDH1A1 (0.43) | CASP3CASP2CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL28620529 | 0.83 | GSK3B (0.75) | CASP3CASP2CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL8488333 | 0.83 | TSHR (0.62) | CASP3CASP2CASP7CASP6CASP8 | |
| SCHEMBL7633687 | 0.80 | ALDH1A1 (0.50) | ALDH1A1MAPTKDM4ETDP1SMN1; SMN2 | |
| SCHEMBL64276 | 0.79 | VDR (0.53) | ALDH1A1MAPTKDM4ETDP1SMN1; SMN2 | |
| Phthalimide SCHEMBL217772 | 0.79 | GSK3B (0.68) | CASP3CASP2CASP7CASP6CASP8 | |
| Toluene SCHEMBL180606 | 0.79 | SMN1; SMN2 (0.65) | ALDH1A1MAPTKDM4ETDP1SMN1; SMN2 | |
| SCHEMBL932442 | 0.79 | SMN1; SMN2 (0.73) | ALDH1A1MAPTKDM4ETDP1SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20140238256-A1 | ENVIRONMENT FRIENDLY WATERLESS OFFSET PLATE | INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES (CN) | 2014-08-28 | — | — | US | claimed |
| US-6566036-B2 | Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization | NEC ELECTRONICS CORPORATION (JP) | 2003-05-20 | — | — | US | claimed |
| US-20010009749-A1 | Chemically amplified resist | NEC CORPORATION | 2001-07-26 | — | — | US | claimed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| WO-2026097702-A1 | PHOTOSENSITIVE COMPOSITION, METHOD FOR PREPARING PATTERN, CURED PRODUCT, AND ELECTRONIC COMPONENT | 江苏艾森半导体材料股份有限公司 | 2026-05-15 | — | — | WO | disclosed |
| CN-119395943-A | Photosensitive composition and application thereof | 江苏艾森半导体材料股份有限公司 | 2025-02-07 | — | — | CN | disclosed |
| CN-118103774-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2024-05-28 | — | — | CN | disclosed |
| CN-113527101-B | Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component | 信越化学工业株式会社 | 2024-04-23 | — | — | CN | disclosed |
| CN-117120927-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2023-11-24 | — | — | CN | disclosed |
| CN-113527680-B | Polymer, photosensitive resin composition, pattern forming method, cured film, and electronic component | 信越化学工业株式会社 | 2023-04-28 | — | — | CN | disclosed |
| CN-108388082-B | Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method | 信越化学工业株式会社（JP） | 2023-01-13 | — | — | CN | disclosed |
| CN-113527680-A | Polymer, photosensitive resin composition, pattern forming method, cured film, and electronic component | 信越化学工业株式会社 | 2021-10-22 | — | — | CN | disclosed |
| US-7105272-B2 | Acid-degradable resin compositions containing ketene-aldehyde copolymer | NIPPON SODA CO., LTD. (JP) | 2006-09-12 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050130057-A1 | Acid-degradable resin compositions containing ketene-aldehyde copolymer | NIPPON SODA CO., LTD. (JP) | 2005-06-16 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| EP-1482361-A1 | ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER | NIPPON SODA CO., LTD. (JP) | 2004-12-01 | — | — | EP | disclosed |
| US-20040198922-A1 | Insulating-film forming material and insulating film using the same | FUJI PHOTO FILM CO., LTD. | 2004-10-07 | — | — | US | disclosed |
| US-6566036-B2 | Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization | NEC ELECTRONICS CORPORATION (JP) | 2003-05-20 | — | — | US | disclosed |
| US-20010009749-A1 | Chemically amplified resist | NEC CORPORATION | 2001-07-26 | — | — | US | disclosed |