SCHEMBL6544650

SCHEMBL6544650

CSCc1cc(C)ccc1C(=O)S(=O)(=O)C(=O)c1ccc(C)cc1CSC

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.36
KMT2A Q03164 3/20 0.35
MEN1 O00255 1/20 0.35
KDM4E B2RXH2 2/20 0.35
HTT P42858 1/20 0.35
LMNA P02545 2/20 0.34
ALDH1A1 P00352 2/20 0.34
HSD17B10 Q99714 2/20 0.34
MAPT P10636 1/20 0.34
TP53 P04637 1/20 0.34
P4HB P07237 1/20 0.34
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34
PAX8 Q06710 1/20 0.34
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
HDAC7 Q8WUI4 1/20 0.33
CSNK2A1 P68400 1/20 0.33
FABP4 P15090 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10204876 0.73 AMY1A (0.55) KMT2AMEN1HTTLMNAALDH1A1
SCHEMBL6544653 0.73 GAA (0.34) KMT2AHTTLMNAALDH1A1MAPT
SCHEMBL15824785 0.71 HSD11B1 (0.39) HSD11B1KMT2AMEN1KDM4ELMNA
SCHEMBL8368002 0.67 MAOA (0.36) HSD11B1LMNAALDH1A1NPC1RAB9A
SCHEMBL27820034 0.66 TRPA1 (0.48) KMT2AMEN1KDM4ELMNAALDH1A1
SCHEMBL10204889 0.66 SLC6A4 (0.39) KMT2AMEN1LMNAALDH1A1MAPT
SCHEMBL10204883 0.66 TAAR1 (0.39) HTTLMNATP53TSHRMAPK1
SCHEMBL11841401 0.66 TDP1 (0.48) ALDH1A1HSD17B10MAPTTP53TSHR
SCHEMBL1146137 0.65 MAPT (0.42) KMT2AMEN1KDM4EHTTLMNA
SCHEMBL31534041 0.64 HSD17B1 (0.42) KMT2AMEN1HTTLMNAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed