SCHEMBL65466

SCHEMBL65466

O=C1OCCC1CN1CCCC1

nearest known ligand 0.40

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
METAP1 P53582 2/20 0.38
ADRA2C P18825 2/20 0.38
CHRM5 P08912 1/20 0.38
CHRNA7 P36544 6/20 0.35
KCNH3 Q9ULD8 1/20 0.35
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA1D P25100 1/20 0.33
ADRA1A P35348 1/20 0.33
ADRA1B P35368 1/20 0.33
SCN1A P35498 1/20 0.33
SCN2A Q99250 1/20 0.33
SCN3A Q9NY46 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12014397 0.98 ADRA2C (0.41) METAP1ADRA2CCHRM5CHRNA7KCNH3
SCHEMBL12014396 0.87 ADRA2A (0.41) ADRA2CKCNH3ADRA2AADRA2BADRA1A
SCHEMBL31708223 0.81 KCNH3 (0.32) KCNH3
SCHEMBL9818144 0.72 KCNH3 (0.38) KCNH3
SCHEMBL24996046 0.69
SCHEMBL16115353 0.69
SCHEMBL1927524 0.69
SCHEMBL10907196 0.69
SCHEMBL7341954 0.69
SCHEMBL2738310 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 434 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-9410951-B2 Method for producing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-20020197559-A1 Polymers, resist compositions and patterning process, novel tetrahydrofuran compounds and their preparation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-26 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020098443-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-25 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020098443-A1 Amine compounds, resist compositions and patterning process PARG, EHMT1, EHMT2 METAP1 4367/4885ADRA2C 2303/4885CHRM5 1575/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.