SCHEMBL683013

SCHEMBL683013

CCC1C2CC3CC(C2)CC1(OC(=O)C(C)(C)CC)C3

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13868796 0.88 HSD11B1 (0.35)
SCHEMBL15889448 0.87 EPHX2 (0.30)
SCHEMBL17750341 0.87 EPHX2 (0.33) ALDH1A1
SCHEMBL11926448 0.85 EPHX2 (0.33)
SCHEMBL13554338 0.85 EPHX2 (0.33)
SCHEMBL15470852 0.84 EPHX2 (0.36)
SCHEMBL2733974 0.84 CYP17A1 (0.33) ALDH1A1LMNA
SCHEMBL10204838 0.84 CYP17A1 (0.33) ALDH1A1LMNA
SCHEMBL14328343 0.84
SCHEMBL17750342 0.83 ALDH1A1 (0.31) ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240242967-A1 Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-18 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11703756-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9411226-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
US-9377690-B2 Compositon for forming metal oxide-containing film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-28 US disclosed
US-9341947-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-05-17 US disclosed
US-20120183899-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-19 US disclosed
US-20120077126-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method CENTRAL GLASS COMPANY, LIMITED (JP) 2012-03-29 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120003589-A1 POLYMER FOR FORMING RESIST PROTECTION FILM, COMPOSITION FOR FORMING RESIST PROTECTION FILM, AND METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES USING THE COMPOSITION DONGJIN SEMICHEM CO., LTD. (KR) 2012-01-05 US disclosed
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110039207-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-17 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-7666967-B2 Ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-23 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed
US-20070128555-A1 Novel ester compound, polymer, resist composition, and patterning process CENTRAL GLASS CO., LTD. 2007-06-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION RCOR1, C1R, C1S ALDH1A1 1376/4885LMNA 2974/4885
US-20120077126-A1 Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method FRG1, AFF2, FBXL19 ALDH1A1 4430/4885LMNA 1234/4885
US-20070128555-A1 Novel ester compound, polymer, resist composition, and patterning process C9, RER1, ARF1 ALDH1A1 2583/4885LMNA 319/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.