SCHEMBL685330

SCHEMBL685330

CCCC[S+](CCCC)CC(=O)CC

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.41
CES2 O00748 6/20 0.35
CES1 P23141 6/20 0.35
KMT2A Q03164 2/20 0.32
MAPT P10636 1/20 0.32
ALDH1A1 P00352 3/20 0.32
AKR1B1 P15121 1/20 0.32
TP53 P04637 1/20 0.32
NAAA Q02083 1/20 0.31
PPARG P37231 5/20 0.31
PPARD Q03181 5/20 0.31
PPARA Q07869 5/20 0.31
HDAC11 Q96DB2 4/20 0.31
TSHR P16473 3/20 0.31
GPR84 Q9NQS5 3/20 0.31
TLR2 O60603 2/20 0.31
FABP4 P15090 2/20 0.31
PTPN1 P18031 2/20 0.31
SLC22A6 Q4U2R8 1/20 0.31
SLC22A8 Q8TCC7 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12762147 0.85 TDP1 (0.45) TDP1ALDH1A1
SCHEMBL6728106 0.84 CES1 (0.44) TDP1CES2CES1KMT2AMAPT
SCHEMBL6723160 0.84 CES2 (0.42) TDP1CES2CES1KMT2AMAPT
SCHEMBL6550710 0.84 EPHX2 (0.35) ALDH1A1TP53TSHR
Trifluoromethanesulfonic Acid SCHEMBL6550322 0.82 KCNH2 (0.35) CES2CES1KMT2AMEN1HSD17B10
SCHEMBL6725752 0.82 KMT2A (0.48) TDP1CES2CES1KMT2AMAPT
SCHEMBL6727865 0.80 KMT2A (0.52) TDP1CES2CES1KMT2AMAPT
SCHEMBL12705732 0.79 TDP1 (0.39) TDP1CES2CES1KMT2AMAPT
SCHEMBL6723402 0.78 CES1 (0.37) TDP1CES2CES1KMT2AALDH1A1
SCHEMBL9635478 0.78 AKR1B1 (0.44) TDP1CES2CES1KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 206 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2681623-B1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORP (JP) 2019-07-10 EP disclosed
EP-2891014-B1 PATTERN FORMING METHOD, AND ELECTRONIC DEVICE PRODUCING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-11-29 EP disclosed
EP-2356517-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-01-25 EP disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9482947-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-11-01 US disclosed
US-9429841-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-30 US disclosed
US-9423689-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-9383645-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-07-05 US disclosed
US-20160147156-A1 PATTERN FORMATION METHOD, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-20160147157-A1 PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070184382-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-09 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-31 US disclosed
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-03 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-05 US disclosed
US-7175963-B2 Chemical amplification type positive resist composition and a resin therefor SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-13 US disclosed
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-02-01 US disclosed
US-20040224251-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-11-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070027336-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, NHERF1, HCN4 TDP1 4668/4885CES2 1191/4885CES1 2847/4885
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN3, NHERF1, HCN4 TDP1 4378/4885CES2 1563/4885CES1 2194/4885
US-20070078269-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN4, HCN3, HCN1 TDP1 4186/4885CES2 1538/4885CES1 2576/4885
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, RFC1, RFC2 TDP1 4160/4885CES2 1688/4885CES1 2936/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.