Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 6/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.31 |
| ▸ | TP53 | P04637 | 2/20 | 0.31 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL685818 | 0.98 | CYP19A1 (0.39) | CYP19A1TSHRHPGDALDH1A1TP53 | |
| SCHEMBL685581 | 0.98 | CYP19A1 (0.39) | CYP19A1TSHRHPGDALDH1A1TP53 | |
| SCHEMBL14557144 | 0.98 | CYP19A1 (0.39) | CYP19A1TSHRHPGDALDH1A1TP53 | |
| SCHEMBL75604 | 0.98 | CYP19A1 (0.39) | CYP19A1TSHRHPGDALDH1A1TP53 | |
| SCHEMBL6906500 | 0.98 | CYP19A1 (0.39) | CYP19A1TSHRHPGDALDH1A1TP53 | |
| Ethylene SCHEMBL27829154 | 0.96 | CYP19A1 (0.38) | CYP19A1TSHRHPGD | |
| SCHEMBL673387 | 0.96 | TSHR (0.33) | CYP19A1TSHRHPGDALDH1A1TP53 | |
| Maleic Acid SCHEMBL28793659 | 0.89 | HCAR2 (0.35) | CYP19A1TSHRTP53 | |
| Methacrylic Acid SCHEMBL27616774 | 0.88 | CYP19A1 (0.34) | CYP19A1 | |
| Crotonic Acid SCHEMBL28793677 | 0.85 | CYP19A1 (0.33) | CYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 465 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118853024-A | High-nickel ternary positive electrode binder and preparation method and application thereof | 深圳大学 | 2024-10-29 | — | — | CN | claimed |
| US-20260139155-A1 | POLISHING AGENT AND METHOD FOR PRODUCING THE SAME, METHOD FOR PRODUCING POLISHING AGENT ADDITIVE LIQUID, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT | AGC Inc. (JP) | 2026-05-21 | — | — | US | disclosed |
| US-20260049231-A1 | POLISHING AGENT, POLISHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT, AND ADDITIVE SOLUTION FOR POLISHING AGENT | AGC Inc. (JP) | 2026-02-19 | — | — | US | disclosed |
| EP-4112676-B1 | METHOD FOR PRODUCING NITRILE RUBBER | ZEON CORP (JP) | 2026-02-18 | — | — | EP | disclosed |
| US-20260014805-A1 | PHOTOCURABLE INK, INK CARTRIDGE, AND INKJET RECORDING METHOD | CANON KK (JP) | 2026-01-15 | — | — | US | disclosed |
| US-20250368860-A1 | POLISHING AGENT, POLISHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT, AND ADDITIVE SOLUTION FOR POLISHING AGENT | AGC Inc. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-3904430-B1 | METHOD FOR RECYCLING NITRILE RUBBER | ZEON CORP (JP) | 2025-12-03 | — | — | EP | disclosed |
| US-12404350-B2 | Method for producing nitrile rubber | ZEON CORPORATION (JP) | 2025-09-02 | — | — | US | disclosed |
| US-12351716-B2 | Method for recycling nitrile rubber | ZEON CORPORATION (JP) | 2025-07-08 | — | — | US | disclosed |
| US-20250206924-A1 | LATEX COMPOSITION AND DIP-MOLDED BODY | ZEON CORPORATION (JP) | 2025-06-26 | — | — | US | disclosed |
| US-20050214676-A1 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED | 2005-09-29 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| EP-1546813-A1 | LOW SILICON-OUTGASSING RESIST FOR BILAYER LITHOGRAPHY | International Business Machines Corporation (US) | 2005-06-29 | — | — | EP | disclosed |
| WO-2004068243-A1 | LOW SILICON-OUTGASSING RESIST FOR BILAYER LITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2004-08-12 | — | — | WO | disclosed |
| US-6770419-B2 | Low silicon-outgassing resist for bilayer lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-08-03 | — | — | US | disclosed |
| US-20040048187-A1 | Low silicon-outgassing resist for bilayer lithography | GLOBALFOUNDRIES U.S. INC. | 2004-03-11 | — | — | US | disclosed |
| US-6677419-B1 | REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-01-13 | — | — | US | disclosed |
| US-20020132185-A1 | Copolymer photoresist with improved etch resistance | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-09-19 | — | — | US | disclosed |
| US-6010826-A | Resist composition | NIPPON ZEON CO., LTD. (JP) | 2000-01-04 | — | — | US | disclosed |
| EP-0786701-A1 | RESIST COMPOSITION | NIPPON ZEON CO., LTD. (JP) | 1997-07-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260049231-A1 | POLISHING AGENT, POLISHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT, AND ADDITIVE SOLUTION FOR POLISHING AGENT | PRKAR2B, PRKAB1, PRKCZ | CYP19A1 3738/4885TSHR 1285/4885HPGD 4195/4885 |
| US-20260014805-A1 | PHOTOCURABLE INK, INK CARTRIDGE, AND INKJET RECORDING METHOD | ATM, ACR, MMAB | CYP19A1 2002/4885TSHR 4390/4885HPGD 852/4885 |
| US-20260139155-A1 | POLISHING AGENT AND METHOD FOR PRODUCING THE SAME, METHOD FOR PRODUCING POLISHING AGENT ADDITIVE LIQUID, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT | NPM1, ATXN2, AP3S1 | CYP19A1 4209/4885TSHR 4206/4885HPGD 4226/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.