Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FAAH | O00519 | 8/20 | 0.34 |
| ▸ | CES1 | P23141 | 8/20 | 0.33 |
| ▸ | CES2 | O00748 | 4/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | HTT | P42858 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10126953 | 0.92 | FAAH (0.39) | FAAHCES1CES2MEN1CYP1A2 | |
| Trifluoromethanesulfonic Acid SCHEMBL6550958 | 0.85 | KCNH2 (0.35) | FAAHCES1CES2MEN1CYP1A2 | |
| SCHEMBL6550308 | 0.85 | EPHX2 (0.34) | FAAHCES1CES2MEN1KMT2A | |
| SCHEMBL9635478 | 0.79 | AKR1B1 (0.44) | CES1CES2MEN1KMT2AHSD17B10 | |
| SCHEMBL6549322 | 0.78 | CA1 (0.32) | FAAHCES1CES2CA2 | |
| SCHEMBL6550563 | 0.77 | CA1 (0.33) | CA2 | |
| SCHEMBL6727586 | 0.77 | KMT2A (0.31) | KMT2A | |
| SCHEMBL6723402 | 0.75 | CES1 (0.37) | CES1CES2MEN1KMT2AHSD17B10 | |
| SCHEMBL685330 | 0.73 | TDP1 (0.41) | CES1CES2MEN1KMT2AHSD17B10 | |
| SCHEMBL9635543 | 0.73 | AKR1B1 (0.48) | CES1CES2MEN1CYP1A2KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 210 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9527809-B2 | Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-9482947-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9429841-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9423689-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-9383645-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-07-05 | — | — | US | disclosed |
| US-20160147157-A1 | PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-7205090-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-17 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20040224251-A1 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-11-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | FAAH 725/4885CES1 2847/4885CES2 1191/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | FAAH 573/4885CES1 2194/4885CES2 1563/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | FAAH 1066/4885CES1 2576/4885CES2 1538/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | FAAH 1422/4885CES1 2936/4885CES2 1688/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.