SCHEMBL706124

SCHEMBL706124

CCCO[Si](OCCC)(c1ccccc1)c1ccc([Si](OCCC)(OCCC)c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
ALDH1A1 P00352 2/20 0.35
LTA4H P09960 2/20 0.35
HPGD P15428 1/20 0.35
ESR1 P03372 1/20 0.34
ESR2 Q92731 1/20 0.34
HTT P42858 1/20 0.34
TP53 P04637 1/20 0.32
SOAT1 P35610 1/20 0.32
TLR8 Q9NR97 1/20 0.32
GAA P10253 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL106121 0.98 LMNA (0.39) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL3481473 0.92 LMNA (0.36) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL19809312 0.92 LMNA (0.36) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL3482334 0.91 TP53 (0.45) LMNAMEN1KMT2AALDH1A1HTT
SCHEMBL16476588 0.88 ALDH1A1 (0.35) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL702280 0.88 LTA4H (0.46) ALDH1A1LTA4HSOAT1TLR8
SCHEMBL19809409 0.88 LMNA (0.36) LMNAMEN1KMT2AALDH1A1LTA4H
SCHEMBL3481508 0.85 TLR8 (0.33) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL61978 0.85 TLR8 (0.35) LTA4HESR1ESR2TLR8
SCHEMBL6338270 0.85 HTT (0.33) LMNAMEN1KMT2AALDH1A1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed