SCHEMBL703152

SCHEMBL703152

CCCCc1ccccc1[SiH2]OC(C)C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.38
CYP3A4 P08684 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C9 P11712 1/20 0.36
ALOX5 P09917 1/20 0.34
PTGS2 P35354 1/20 0.34
TLR8 Q9NR97 1/20 0.33
THRA P10827 1/20 0.33
THRB P10828 1/20 0.33
BID P55957 3/20 0.33
MCL1 Q07820 3/20 0.33
BCL2L1 Q07817 2/20 0.33
BAK1 Q16611 2/20 0.33
KAT8 Q9H7Z6 2/20 0.33
PPARG P37231 1/20 0.33
PPARA Q07869 1/20 0.33
EP300 Q09472 1/20 0.33
KAT2A Q92830 1/20 0.33
KAT2B Q92831 1/20 0.33
KAT5 Q92993 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703006 0.86 PTGS2 (0.35) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL6125428 0.79 LIPG (0.40) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL27614154 0.77 LIPG (0.41) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL705082 0.77 LIPG (0.38) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL28684438 0.75 ADRA2A (0.33) PPARGPPARA
SCHEMBL703700 0.75 LTB4R (0.30)
SCHEMBL2961097 0.75 ALDH1A1 (0.32)
SCHEMBL6125424 0.75 LIPG (0.46) LIPGALOX5PTGS2TLR8THRA
SCHEMBL704395 0.74 PPARA (0.42) LIPGCYP3A4CYP2D6CYP2C9PTGS2
SCHEMBL6125412 0.73 LIPG (0.49) LIPGALOX5PTGS2THRATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed